High-quality InAs[sub y]P[sub 1-y] step-graded buffer by molecular-beam epitaxy

Hudait, M. K.; Lin, Y.; Wilt, D. M.; Speck, J. S.; Tivarus, C. A.; Heller, E. R.; Pelz, J. P.; Ringel, S. A.
May 2003
Applied Physics Letters;5/12/2003, Vol. 82 Issue 19, p3212
Academic Journal
Relaxed, high-quality, compositionally step-graded InAs[SUBy]P[SUB1-y] layers with an As composition of y = 0.4, corresponding to a lattice mismatch of ∼1.3% were grown on InP substrates using solid-source molecular-beam epitaxy. Each layer was found to be nearly fully relaxed observed by triple axis x-ray diffraction, and plan-view transmission electron microscopy revealed an average threading dislocations of 4 × 10[SUP6] cm[SUP-2] within the InAs[SUB0.4]P[SUB0.6] cap layer. Extremely ordered crosshatch morphology was observed with very low surface roughness (3.16 nm) compared to cation-based In[SUB0.7]Al[SUB0.3]As/In[SUBx]Al[SUB1-x]As/InP graded buffers (10.53 nm) with similar mismatch and span of lattice constants on InP. The results show that InAs[SUBy]P[SUB1-y] graded buffers on InP are promising candidates as virtual substrates for infrared and high-speed metamorphic III-V devices.


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