Synthesis and optical properties of semiconducting beta-FeSi[sub 2] nanocrystals

Wan, Q.; Wang, T. H.; Lin, C. L.
May 2003
Applied Physics Letters;5/12/2003, Vol. 82 Issue 19, p3224
Academic Journal
Vacuum electron-beam coevaporation of Fe and Si followed by annealing in N[SUB2] ambient is used to synthesize beta iron disilicide (β-FeSi[SUB2]) nanocrystals. The reason for β-FeSi[SUB2] nanocrystal formation is discussed based on the principle of minimization of the interface energy. X-ray diffraction studies suggest that β-phase FeSi[SUB2] nanostructures turn into the a phase when the annealing temperature is 1000 °C. The optical transmission measurements indicate that the β-FeSi[SUB2] nanocrystals have a direct-band structure with the energy gap in the range of 0.84 -0.88 eV. A sharp photoluminescence peak of the β-FeSi[SUB2] nanocrystals located at 1.5 μm is measured at 77 K.


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