Light intensity imaging of single InAs quantum dots using scanning tunneling microscope

Tsuruoka, T.; Ohizumi, Y.; Ushioda, S.
May 2003
Applied Physics Letters;5/12/2003, Vol. 82 Issue 19, p3257
Academic Journal
Light intensity images of self-assembled p-type InAs quantum dots (QDs) embedded in Al[SUB0.6]Ga[SUB0.4]As were measured by injecting electrons from the tip of a scanning tunneling microscope at room temperature. Bright round features appeared in the images for different photon energies. The light emission spectrum measured over each bright feature showed a single emission peak with different peak energy. By comparing the emission peak energies with the transition energies calculated for pyramidal shaped QD structures, we found that the observed bright features correspond to individual InAs QDs.


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