Isothermal capacitance transient spectroscopy of pseudomorphic high-electron-mobility transistors

Maruno, Shigemitsu; Abe, Yuji; Ozeki, Tatsuo; Nakamoto, Takahiro; Yoshida, Naohito
May 2003
Applied Physics Letters;5/12/2003, Vol. 82 Issue 19, p3339
Academic Journal
The surface electronic properties of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors were investigated by isothermal capacitance transient spectroscopy (ICTS) and gate-leakage current characteristic measurements. Both hole- and electron-like trap spectra were observed by ICTS measurements on gate-source/drain capacitance. We observed enhancement of leakage current and drastic change of static and transient capacitance behavior around a pinch-off voltage. The leakage characteristics and ICTS results were explained in terms of a surface states model.


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