TITLE

High quality semipolar (1...102) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities

AUTHOR(S)
Ichikawa, S.; Iwata, Y.; Funato, M.; Nagata, S.; Kawakami, Y.
PUB. DATE
June 2014
SOURCE
Applied Physics Letters;6/23/2014, Vol. 104 Issue 25, p1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Adjusting the growth conditions from those for c-plane growth realizes high-quality semipolar (1...102) AlGaN/AlN quantum wells (QWs) with atomically smooth surfaces and abrupt interfaces on AlN substrates. Upon comparing the optical properties to those of c-plane QWs using time-integrated and time-resolved photoluminescence spectroscopy, the estimated internal electric field is much smaller in (1...102) AlGaN/AlN QWs than in c-plane QWs. Thus, (1...102) AlGaN/AlN QWs have narrower emission line widths and remarkably faster radiative recombination lifetimes, realizing highly efficient deep ultraviolet emissions.
ACCESSION #
96853827

 

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