CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range

Yakushev, M.; Varavin, V.; Remesnik, V.; Marin, D.
June 2014
Semiconductors;Jun2014, Vol. 48 Issue 6, p767
Academic Journal
Heteroepitaxial structures n-CdHgTe for the near-infrared spectral range ( x ≈ 0.4) are grown by molecular beam epitaxy on Si(310) substrates 72.6 and 100 mm in diameter. High composition homogeneity over the structure area is attained; the variation in x for 100-mm wafers is 0.015-0.025. During growth, the mercury-cadmium telluride (MCT) layers are doped with In with the concentration (0.5-3) × 10 cm. The magnetic-field dependences of the Hall effect are studied in the range of magnetic fields 0.05-1.0 T at liquid-nitrogen and room temperatures. The experimental values of the electron mobility at room temperature are close to the calculated ones, while at liquid-nitrogen temperature, they are lower than the calculated mobilities. The possible causes of this phenomenon such as the influence of the MCT transition layer at the interface with the CdTe buffer layer and lattice defects of MCT are discussed. The variation in the concentration and mobility of charge carriers in MCT structures after activation annealing are studied.


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