Lasing characteristics and modal gain of a lateral-junction InGaAs/GaAs edge-emitting laser diode grown on a patterned GaAs (311) A-oriented substrate

Ocampo, José M. Zanardi; Vaccaro, Pablo O.; Saravanan, Shanmugam; Kubota, Kazuyoshi; Aida, Tahito
May 2003
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p2951
Academic Journal
Edge-emitting InGaAs/GaAs laser diodes were grown on patterned GaAs (311)A-oriented substrates. Due to the amphoteric properties of Si as a dopant in high-index GaAs, a device with a lateral p-n junction was obtained. CW lasing was observed up to 200 K. The dependence of the threshold current with temperature was measured. The characteristic temperatures were T[sub 0] = 180 and T[sub 0] = 57 K for experimental temperatures below and above 100 K, respectively, meaning that the carrier confinement structure must be improved. Quantitative results of the cavity gain were experimentally obtained.


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