Third-order nonlinearities in silicon at telecom wavelengths

Dinu, M.; Quochi, F.; Garcia, H.
May 2003
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p2954
Academic Journal
The two-photon absorption coefficient and Kerr coefficient of bulk crystalline silicon are determined near the telecommunication wavelengths of 1.3 and 1.55 µm using femtosecond pulses and a balanced Z-scan technique. A phase shift sensitivity of the order of 1 mrad is achieved, enabling the accurate measurement of third-order nonlinear coefficients at fluences smaller than 100 µJ/cm². From the two-photon absorption coefficient (β∼0.8 cm/GW) and the Kerr coefficient (n[sub 2]∼4 × 10[sup -14] cm²/W) at a wavelength λ = 1.54 µm, a value F ∼ 0.35 for the nonlinear figure of merit for all-optical switching is determined.


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