Growth and physical properties of Ga[sub 2]O[sub 3] thin films on GaAs(001) substrate by molecular-beam epitaxy

Yu, Z.; Overgaard, C. D.; Droopad, R.; Passlack, M.; Abrokwah, J. K.
May 2003
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p2978
Academic Journal
We report effusive evaporation of Ga[sub 2]O[sub 3] thin films on GaAs(001) substrates in a production-type molecular-beam epitaxy system. A polycrystalline Ga[sub 2]O[sub 3] charge heated in a high-temperature effusion cell is used as the evaporation source. The Ga[sub 2]O[sub 3]-GaAs structures are characterized by atomic force microscopy (AFM), Rutherford backscattering spectroscopy (RBS), ellipsometry, and transmission electron microscopy (TEM). The Ga[sub 2]O[sub 3] films are amorphous and stoichiometric by transmission electron diffraction and RBS, respectively. Under optimal growth conditions, the Ga[sub 2]O[sub 3] film surface has a typical roughness of 2-3 Ã… as revealed by AFM, while the Ga[sub 2]O[sub 3]-GaAs interface is atomically abrupt as confirmed by the cross-sectional TEM. Such amorphous and stoichiometric Ga[sub 2]O[sub 3] oxide paves the way for GaAs gate dielectrics applications.


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