Identification of hexagonal polycrystal in epitaxially grown InN by synchrotron x-ray diffraction and near-edge x-ray absorption fine structure spectroscopy

Lee, Ik Jae; Shin, Hyun-Joon; Chang, Suk Sang; Lee, Min Kyu; Kim, Hyung-Kook
May 2003
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p2981
Academic Journal
The structures and crystallographic orientations of indium nitride films of varying thicknesses on sapphire(0001) were investigated using high-resolution synchrotron x-ray scattering and angle-dependent near-edge x-ray absorption fine structure (NEXAFS) spectroscopy with linearly polarized x rays. The x-ray scattering data showed that epitaxially grown InN films have a polycrystalline structure when their thickness is greater than 3000 Ã…. The N 1s NEXAFS spectra of thin films have a strong polarization-dependent spectral feature resulting from the preferred c-axis orientation. This polarization dependence decreases as the film thickness increases and is not present in the spectra of films that are more than 3000 Ã… thick. These results indicate that the c axis has a preferred orientation in thin films, but that this orientation is random in thick films, which have a polycrystalline hexagonal structure.


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