Very efficient light emission from bulk crystalline silicon

Trupke, Thorsten; Zhao, Jianhua; Wang, Aihua; Corkish, Richard; Green, Martin A.
May 2003
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p2996
Academic Journal
Due to its indirect bandstructure, bulk crystalline silicon is generally regarded as a poor light emitter. In contrast to this common perception, we report here on surprisingly large external photoluminescence quantum efficiencies of textured bulk crystalline silicon wafers of up to 10.2% at T = 130 K and of 6.1% at room temperature. Using a theoretical model to calculate the escape probability for internally generated photons, we can conclude from these experimental figures that the radiative recombination probability or internal luminescence quantum efficiency exceeds 20% at room temperature.


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