Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN

Yang, Qing; Feick, Henning; Weber, Eicke R.
May 2003
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3002
Academic Journal
Excitonic luminescence of GaN after irradiation with 0.42-MeV electrons has been investigated in detail. The low-energy irradiation generates damage exclusively in the N sublattice. Additional bound-exciton lines are found and are shown to arise from a hydrogenic donor with a binding energy of 25 meV. The donor binding energy, bound-exciton localization energy, and bound-exciton lifetime are discussed in comparison with the values observed for O[sub N] and Si[sub Ga] in the same sample. Nitrogen vacancies V[sub N] forming a hydrogenic donor state are suggested to be the most likely origin of this luminescence emission. Finally, a metastable behavior related to the damage-induced defects is reported and discussed in conjunction with interstitial-nitrogen-related defects.


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