Hydrogen density-of-states in polycrystalline silicon

Nickel, N. H.; Brendel, K.
May 2003
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3029
Academic Journal
The influence of laser crystallization on hydrogen bonding in polycrystalline silicon is investigated employing hydrogen effusion measurements. Fully crystallized poly-Si samples contain a residual H concentration of up to 1.5 × 1[sup 02]2 cm[sup -3]. From the effusion spectra, the H density-of-states distribution is derived. Interestingly, hydrogen bonding is affected by the deposition temperature of the amorphous starting material. Below the H transport states, four peaks are observed in the H density of states at ≈-2.15, -2.4, -2.7, and -3.25 eV.


Related Articles

  • Polycrystalline silicon formed by ultrahigh-vacuum sputtering system. Mishima, Y.; Takei, M.; Uematsu, T.; Matsumoto, N.; Kakehi, T.; Wakino, U.; Okabe, M. // Journal of Applied Physics;7/1/1995, Vol. 78 Issue 1, p217 

    Presents a study that developed two methods of polycrystalline silicon films by using an ultrahigh-vacuum sputtering system. Calculation of the activation energy of the crystalline growth; Field-effect mobilities of the arsenic-deposited polycrystalline silicon films; Influence of hydrogen...

  • Highly conductive ultrathin crystalline Si layers by thermal crystallization of amorphous Si. Kakkad, R.; Fonash, S.J.; Weideman, S. // Applied Physics Letters;12/16/1991, Vol. 59 Issue 25, p3309 

    Focuses on the production of ultrathin, conductive polycrystalline Si films on glass by crystallization of Si film. Applications of ultrathin films in photodetector and solar cell structures; Growth rate of plasma deposited microcrystalline material; Crystallization of amorphous silicon.

  • Switch-on overshoot transient decay mechanism in polycrystalline silicon thin-film transistors. Papaioannou, G. J.; Exarchos, M.; Kouvatsos, D. N.; Voutsas, A. T. // Applied Physics Letters;12/19/2005, Vol. 87 Issue 25, p252112 

    The present work investigates the switch-on transient decay in polycrystalline thin-film transistors. The decay is found to follow the stretched exponential relaxation model independently of the polycrystalline film properties and the device bias conditions or operating temperature. The...

  • Low-temperature annealing characteristics of the lightly arsenic-doped polycrystalline silicon. Yang, Chaosu // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p112 

    Low-temperature annealing characteristics of the lightly arsenic-doped polycrystalline silicon have been studied. It was found that, when the silicon dioxide layer covered on the polycrystalline silicon was moved after high-temperature processing and the polycrystalline silicon was annealed at...

  • Spike annealing of boron-implanted polycrystalline-silicon on thin SiO[sub 2]. Fiory, A. T.; Bourdelle, K. K.; Roy, P. K. // Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1071 

    Spike thermal annealing is examined for electrical activation of B implants into 100 nm Si films deposited over 1.5 to 2.4 nm thermally grown SiO[sub 2]. These structures simulate gate stacks in advanced p-type metal-oxide-Si (PMOS) devices. Spike anneals, at minimized thermal budget, are shown...

  • Transport properties of LaTiO[sub 3+x] films and heterostructures. Schmehl, A.; Lichtenberg, F.; Bielefeldt, H.; Mannhart, J.; Schlom, D. G. // Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3077 

    We report on the transport properties of LaTiO[sub 3 + ε and LaTiO[sub 3.5] films. The LaTiO[sub 3 +ε] samples show metallic transport and several samples exhibit a hysteretic drop of resistance during cooldown at ∼240 K. The ferroelectric LaTiO[sub 3.5] samples, grown in capacitor...

  • Dose dependence of crystallization in implanted polycrystalline silicon films on SiO2. Iverson, R. B.; Reif, R. // Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p645 

    Crystallization of 1500 Å polycrystalline silicon films self-implanted at doses of 2×1015–6×1015 ions/cm2 is investigated. For doses of 2×1015–5×1015 ions/cm2, crystallization is due to the growth of crystallites which nucleate at a rate which decreases with...

  • Nucleation and growth mechanism of hemispherical grain polycrystalline silicon. Matsuo, N.; Ogawa, H.; Kouzaki, T.; Okada, S. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2607 

    Examines the formation of nucleus at low oxygen partial pressure during annealing. Increase on the density of the hemispherical grain polycrystalline (HSG) nuclei; Growth direction of the HSG from the amorphous silicon surfaces; Characteristics of HSG; Incubation period of the nucleation of...

  • Rapid thermal anneal induced effects in polycrystalline silicon gate structures. Kamgar, Avid; Hillenius, S. J. // Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1251 

    Effects of dynamic temperature nonuniformities during rapid thermal anneal (RTA) cycles of layered structures have been investigated. Silicon gate capacitors (4000 Å, As doped, polycrystalline Si on 175 Å thermal oxide) were subjected to temperatures 450–1200 °C using...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics