TITLE

Hydrogen density-of-states in polycrystalline silicon

AUTHOR(S)
Nickel, N. H.; Brendel, K.
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3029
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The influence of laser crystallization on hydrogen bonding in polycrystalline silicon is investigated employing hydrogen effusion measurements. Fully crystallized poly-Si samples contain a residual H concentration of up to 1.5 × 1[sup 02]2 cm[sup -3]. From the effusion spectra, the H density-of-states distribution is derived. Interestingly, hydrogen bonding is affected by the deposition temperature of the amorphous starting material. Below the H transport states, four peaks are observed in the H density of states at ≈-2.15, -2.4, -2.7, and -3.25 eV.
ACCESSION #
9630229

 

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