Electric-field-induced heating and energy relaxation in GaN

Eckhause, T. A.; Süzer, Ö.; Kurdak, Ç.; Yun, F.; Morkoç, H.
May 2003
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3035
Academic Journal
Electric-field-induced heating is studied using noise measurements in n-type GaN grown on sapphire substrates. The measured electron temperature is found to be an order of magnitude higher than what is expected based on calculations of electron-phonon coupling via acoustic deformation potential scattering processes in GaN. The discrepancy may be explained by a large thermal boundary resistance between the GaN film and the sapphire substrate.


Related Articles

  • Switching times in electric-field-tunable GaAs/AlAs heterostructures. Ribeiro, F. J.; Capaz, R. B.; Koiller, Belita // Applied Physics Letters;9/16/2002, Vol. 81 Issue 12, p2247 

    Optical experiments on electric-field-tunable AlAs/GaAs heterostructures demonstrate that the optical nature of these structures can be directly controlled by an applied electric field. We present calculations performed within the tight-binding supercell formalism, taking into account the...

  • Enhancement by electric field of high-speed photoconductivity in AlGaN/GaN heterostructures. Danilchenko, B. A.; Zelensky, S. E.; Drok, E. A.; Belyaev, A. E.; Kochelap, V. A.; Lüth, H.; Vitusevich, S. A. // Applied Physics Letters;4/9/2007, Vol. 90 Issue 15, p152102 

    The authors report a large response in the conductivity of AlGaN/GaN heterostructures to a 10 ns UV laser pulses. The dynamics of the conductivity response follows the time evolution of the laser pulse. This fast photoconductivity component shows a remarkable enhancement in high electric fields....

  • Tunneling Radiative Recombination in p�n Heterostructures Based on Gallium Nitride and Other A[sup III]B[sup V] Semiconductor Compounds. Kudryashov, V. E.; Yunovich, A. �. // Journal of Experimental & Theoretical Physics;Nov2003, Vol. 97 Issue 5, p1015 

    We present summarized data on the tunneling emission in p�n heterostructures based on GaN and on a series of cubic A[sup III]B[sup V] semiconductors, including GaAs, InP, GaSb, and (Ga, In)Sb. The emission in p�n heterostructures of the InGaN/AlGaN/GaN type in a spectral interval from...

  • Study of Terahertz Emission from Surfaces of Cu(InGa)Se2 Layers. KOROLIOV, A.; ARLAUSKAS, A.; BALAKAUSKAS, S.; ŠOLIŪNAS, M.; MANEIKIS, A.; KROTKUS, A.; ŠETKUS, A.; TAMOŠIŪNAS, V. // Acta Physica Polonica, A.;Nov2013, Vol. 124 Issue 5, p846 

    In this contribution, we report on investigations of THz emission from Cu(In,Ga)Se2 layers, deposited from a single copper-deficient sputtering target. Emission from Cu(In,Ga)Se2 layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that...

  • Experimental demonstration of split side-gated resonant interband tunneling devices. Moon, J. S.; Chow, D. H.; Schulman, J. N.; Deelman, P.; Zinck, J. J.; Ting, D. Z.- Y. // Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p678 

    We report a prototype side-gated asymmetric resonant interband tunneling device (RITD) fabricated with an AlSb/InAs/GaSb/AlSb heterostructure for Rashba spin filter applications. This device features independent control gates along the sides of an RITD mesa structure that can be used to provide...

  • Propagation of electric fields induced by optical phonons in semiconductor heterostructures. Rukhlenko, I.; Fedorov, A. // Optics & Spectroscopy;Feb2006, Vol. 100 Issue 2, p238 

    The penetration of electric fields accompanying long-wavelength optical phonos from one region of a semiconductor heterostructure to another is investigated. It is proposed to determine the penetration depth of such fields from the relaxation caused by these fields in quantum dots. By the...

  • Electric-field control of ferromagnetic resonance in monolithic BaFe12O19–Ba0.5Sr0.5TiO3 heterostructures. Das, Jaydip; Young-Yeal Song; Mingzhong Wu // Journal of Applied Physics;Sep2010, Vol. 108 Issue 4, p043911 

    This paper demonstrates an electric-field tuning of the ferromagnetic resonance (FMR) responses at millimeter wave frequencies for a monolithic magneto-electric heterostructure. The layered stack is comprised of c-axis oriented and low loss barium hexaferrite (BaM) and (111) oriented...

  • Ballistic transport in GaN/AlGaN resonant tunneling diodes. Sakr, S.; Warde, E.; Tchernycheva, M.; Julien, F. H. // Journal of Applied Physics;Jan2011, Vol. 109 Issue 2, p023717 

    In this work we theoretically study the vertical transport in GaN/AlGaN resonant tunneling diodes in the ballistic regime. Heterostructures based on III-nitride compounds are characterized by a large conduction band discontinuity and a presence of an internal electric field, both of which have...

  • Bulk GaN and AlGaN/GaN heterostructure drift velocity measurements and comparison to theoretical models. Barker, J. M.; Ferry, D. K.; Koleske, D. D.; Shul, R. J. // Journal of Applied Physics;3/15/2005, Vol. 97 Issue 6, p063705 

    The room-temperature velocity-field characteristics for n-type gallium nitride and AlGaN/GaN heterostructures, grown epitaxially on sapphire, were determined experimentally. A pulsed voltage input and four-point measurements were used on special geometry samples to determine the electron drift...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics