TITLE

Electric-field-induced heating and energy relaxation in GaN

AUTHOR(S)
Eckhause, T. A.; Süzer, Ö.; Kurdak, Ç.; Yun, F.; Morkoç, H.
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3035
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electric-field-induced heating is studied using noise measurements in n-type GaN grown on sapphire substrates. The measured electron temperature is found to be an order of magnitude higher than what is expected based on calculations of electron-phonon coupling via acoustic deformation potential scattering processes in GaN. The discrepancy may be explained by a large thermal boundary resistance between the GaN film and the sapphire substrate.
ACCESSION #
9630227

 

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