TITLE

Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping

AUTHOR(S)
Nakarmi, M. L.; Kim, K. H.; Li, J.; Lin, J. Y.; Jiang, H. X.
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3041
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Mg-δ-doping in GaN and A1GaN epilayers has been investigated by metalorganic chemical vapor deposition. It was demonstrated through electrical, optical, and structural studies that Mg-δ-doping improves not only p-type conduction, but also the overall quality of p-type GaN and A1GaN epilayers. A twofold (fivefold) enhancement in lateral (vertical) p-type conduction have been achieved for GaN and A1GaN epilayers. It is argued that the observed dislocation density reduction (of about one order of magnitude) is due to the growth interruption in the Mg-δ-doping duration that partially terminates the dislocation propagation in the growth direction. Furthermore, Mg-δ-doping also reduces Mg impurity self-compensation and enhances hole concentrations in Mg-δ-doped GaN or A1GaN.
ACCESSION #
9630225

 

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