Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films

Wu, Stephen Y.; Liu, H. X.; Gu, Lin; Singh, R. K.; Budd, L.; van Schilfgaarde, M.; McCartney, M. R.; Smith, David J.; Newman, N.
May 2003
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3047
Academic Journal
We report a theoretical and experimental investigation of Cr-doped A1N. Density functional calculations predict that the isolated Crt[sub 2] defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for concentrations over 5%. Substitutional A1[sub 1 - x]Cr[sub x]N random alloys with 0.05≤x≤0.15 are predicted to have Curie temperatures over 600 K. Experimentally, we have characterized and optimized the molecular beam epitaxy thin film growth process, and observed room temperature ferromagnetism with a coercive field, H[sub c], of 120 Oe. The measured magnetic susceptibility indicates that over 33% of the Cr is magnetically active at room temperature and 40% at low temperature.


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