TITLE

Measuring electrical current during scanning probe oxidation

AUTHOR(S)
Pérez-Murano, F.; Martın, C.; Barniol, N.; Kuramochi, H.; Yokoyama, H.; Dagata, J. A.
PUB. DATE
May 2003
SOURCE
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3086
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrical current is measured during scanning probe oxidation by performing force versus distance curves under the application of a positive sample voltage. It is shown how the time dependence of the current provides information about the kinetics of oxide growth under conditions in which the tip-surface distance is known unequivocally during current acquisition. Current measurements at finite tip-sample distance, in particular, unveil how the geometry of the meniscus influences its electrical conduction properties as well as the role of space charge at very small tip-sample distances.
ACCESSION #
9630208

 

Related Articles

  • Current, charge, and capacitance during scanning probe oxidation of silicon. II. Electrostatic and meniscus forces acting on cantilever bending. Dagata, J. A.; Perez-Murano, F.; Martin, C.; Kuramochi, H.; Yokoyama, H. // Journal of Applied Physics;8/15/2004, Vol. 96 Issue 4, p2393 

    A comprehensive analysis of the electrical current passing through the tip-substrate junction during oxidation of silicon by scanning probe microscopy (SPM) is presented. This analysis identifies the electronic and ionic contributions to the total current, especially at the initial stages of the...

  • Voltage modulation scanned probe oxidation. Perez-Murano, Francesc; Birkelund, Karen // Applied Physics Letters;7/12/1999, Vol. 75 Issue 2, p199 

    Studies scanned probe microscope (SPM) oxidation with voltage modulation. SPM oxidation's enhancement of the oxide growth rate; Improvement of the aspect ratio of oxide features.

  • Scanning probe microscope tip-induced oxidation of GaAs using modulated tip bias. Okada, Yoshitaka; Iuchi, Yoshimasa // Journal of Applied Physics;6/15/2000, Vol. 87 Issue 12, p8754 

    Presents information on a study which investigated the basic mechanisms that determine the lateral resolution limits in the tip-induced nano-oxidation process of n... -GaAs(100) substrates through scanning probe microscopy. Experimental details; Results and discussion.

  • Current, charge, and capacitance during scanning probe oxidation of silicon. I. Maximum charge density and lateral diffusion. J. A. Dagata; Perez-Murano, F.; Martin, C.; Kuramochi, H.; Yokoyama, H. // Journal of Applied Physics;8/15/2004, Vol. 96 Issue 4, p2386 

    A comprehensive analysis of the electrical current passing through the tip-substrate junction during oxidation of silicon by scanning probe microscopy (SPM) is presented. This analysis of experimental results under dc-bias conditions resolves the role of electronic and ionic contributions,...

  • Analysis of scanning probe used for simultaneous measurement of tunneling current and surface... Oyama, Yutaka; Majima, Yutaka // Journal of Applied Physics;12/15/1999, Vol. 86 Issue 12, p7087 

    Presents a study which analyzed a scanning probe microscope used for the simultaneous measurement of tunneling current and surface potential. Results of the analysis; Calculation of capacitance, displacement current, and tunneling current; Details of the experiment; Conclusions.

  • Accurate formula for conversion of tunneling current in dynamic atomic force spectroscopy. Sader, John E.; Sugimoto, Yoshiaki // Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p043502 

    Recent developments in frequency modulation atomic force microscopy enable simultaneous measurement of frequency shift and time-averaged tunneling current. Determination of the interaction force is facilitated using an analytical formula, valid for arbitrary oscillation amplitudes [Sader and...

  • Noninvasive imaging of signals in digital circuits. Gebrial, W.; Prance, R. J.; Clark, T. D.; Harland, C. J.; Prance, H.; Everitt, M. // Review of Scientific Instruments;Mar2002, Vol. 73 Issue 3, p1293 

    In this article we describe the construction and use of a noninvasive (noncontact) electric potential probe to measure time delays of signals propagating through digital circuits. As we show, by incorporating such probes into a scanning microscope system we have been able to create time delay...

  • Modification of the tip shape of a scanning probe microscope using ion sputtering. Dedkov, G. V.; Rekhviashvili, S. Sh. // Technical Physics Letters;Jan99, Vol. 25 Issue 1, p67 

    The process of ion sputtering of the tip of a scanning probe microscope is modeled to determine the conditions for the formation of protrusions at the apex of the tip. It is shown that for an isotropic sputtering process sharper protrusions form at the apex of a conical tip if the initial radius...

  • Desorption dynamics of oxide nanostructures fabricated by local anodic oxidation nanolithography. Mori, G.; Lazzarino, M.; Ercolani, D.; Sorba, L.; Heun, S.; Locatelli, A. // Journal of Applied Physics;6/1/2005, Vol. 97 Issue 11, p114324 

    We studied the properties of GaAs oxides which were grown by local anodic oxidation (LAO) nanolithography using an atomic force microscope. We find that the LAO structures desorb under irradiation with soft x-rays (130 eV). We analyzed the desorption process in detail by time-resolved...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics