Characteristics of a field-effect transistor with stacked InAs quantum dots

Wang, T. H.; Li, H. W.; Zhou, J. M.
May 2003
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3092
Academic Journal
We report on the operation of a heterojunction field-effect transistor with stacked InAs quantum dots below a layer of two-dimensional electron gases. The output characteristics show a rapid increase of the drain current before its saturation. The transconductance exhibits a few peaks when scanning the gate voltage. These behaviors can be well explained by additional transport through the stacked InAs quantum dots. Our results indicate that the transistor could be controlled by an operation of one single electron in quantum dots.


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