4H–SiC photoconductive switching devices for use in high-power applications

Dogˇan, S.; Teke, A.; Huang, D.; Morkoç, H.; Roberts, C. B.; Parish, J.; Ganguly, B.; Smith, M.; Myers, R. E.; Saddow, S. E.
May 2003
Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3107
Academic Journal
Silicon carbide is a wide-band-gap semiconductor suitable for high-power high-voltage devices and it has excellent properties for use in photoconductive semiconductor switches (PCSSs). PCSS were fabricated as planar structures on high-resistivity 4H-SiC and tested at dc bias voltages up to 1000 V. The typical maximum photocurrent of the device at 1000 V was about 49.4 A. The average on-state resistance and the ratio of on-state to off-state currents were about 20 Ω and 3 × 10[sup 11], respectively. Photoconductivity pulse widths for all applied voltages were 8-10 ns. These excellent results are due in part to the removal of the surface damage by high-temperature H[sub 2] etching and surface preparation. Atomic force microscopy images revealed that very good surface morphology, atomic layer flatness, and large step width were achieved.


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