Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

Izhnin, I. I.; Dvoretsky, S. A.; Mynbaev, K. D.; Fitsych, O. I.; Mikhailov, N. N.; Varavin, V. S.; Pociask-Bialy, M.; Voitsekhovskii, A. V.; Sheregii, E.
April 2014
Journal of Applied Physics;2014, Vol. 115 Issue 16, p163501-1
Academic Journal
A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of "stirring" defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700 °C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.


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