TITLE

Investigation of TiOx barriers for their use in hybrid Josephson and tunneling junctions based on pnictide thin films

AUTHOR(S)
Döring, S.; Monecke, M.; Schmidt, S.; Schmidl, F.; Tympel, V.; Engelmann, J.; Kurth, F.; Iida, K.; Haindl, S.; Mönch, I.; Holzapfel, B.; Seidel, P.
PUB. DATE
February 2014
SOURCE
Journal of Applied Physics;2014, Vol. 115 Issue 8, p1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We tested oxidized titanium layers as barriers for hybrid Josephson junctions with high IcRn-products and for the preparation of junctions for tunneling spectroscopy. For that we firstly prepared junctions with conventional superconductor electrodes, such as lead and niobium, respectively. By tuning the barrier thickness, we were able to change the junction's behavior from a Josephson junction to tunnel-like behavior applicable for quasi-particle spectroscopy. Subsequently, we transferred the technology to junctions using Co-doped BaFe2As2 thin films prepared by pulsed laser deposition as base electrode and evaporated Pb as counter electrode. For barriers with a thickness of 1.5 nm, we observe clear Josephson effects with IcRn ≈ 90 µV at 4.2 K. These junctions behave SNS'-like (SNS: superconductor-normal conductor-superconductor) and are dominated by Andreev reflection transport mechanism. For junctions with barrier thickness of 2.0 nm and higher, no Josephson but SIS'- (SIS: superconductor-insulator-superconductor) or SINS'-like (SINS: superconductor-normal conductor-insulator-superconductor) behavior with a tunnel-like conductance spectrum was observed.
ACCESSION #
95694454

 

Related Articles

  • Current-voltage characteristics of SIS structures with localized states in the material of the barrier layer. Devyatov, I. A.; Kupriyanov, M. Yu. // Journal of Experimental & Theoretical Physics;Aug98, Vol. 87 Issue 2, p375 

    Elastic resonant tunneling through a single localized state in an insulating layer (I-layer) situated in the constriction zone between two thick superconducting electrodes is investigated theoretically, and the current-voltage characteristic (IVC) of the structure is calculated. The accompanying...

  • Effect of Virtual Andreev Reflection on Tunneling in Normal/Superconductor Graphene Junction. Soodchomshom, Bumned // Journal of Superconductivity & Novel Magnetism;Apr2012, Vol. 25 Issue 2, p405 

    The Andreev reflection (AR) process and the tunneling conductance in graphene-based normal metal/superconductor junction are studied, where both massless and massive fermions are considered. As a result, the evanescent type of AR or the virtual Andreev reflection (VAR), is found to take place at...

  • Supercurrent in Nb/InAs-nanowire/Nb Josephson junctions. Günel, H. Y.; Batov, I. E.; Hardtdegen, H.; Sladek, K.; Winden, A.; Weis, K.; Panaitov, G.; Grützmacher, D.; Schäpers, Th. // Journal of Applied Physics;Aug2012, Vol. 112 Issue 3, p034316 

    We report on the fabrication and measurements of planar mesoscopic Josephson junctions formed by InAs nanowires coupled to superconducting Nb terminals. The use of Si-doped InAs-nanowires with different bulk carrier concentrations allowed to tune the properties of the junctions. We have studied...

  • Tunneling spectra of submicron Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions: evolution from superconducting gap to pseudogap. S. P. Zhao; X. B. Zhu; H. Tang // European Physical Journal B -- Condensed Matter;Sep2009, Vol. 71 Issue 2, p195 

    Tunneling spectra of near optimally doped, submicron Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions are presented, and examined in the region where the superconducting gap evolves into pseudogap. The spectra are analyzed using a self-energy model, proposed by Norman et al., in which both...

  • Effects of interlayer electrode thickness in Nb/(MoSi[sub 2]/Nb)[sub N] stacked Josephson junctions. Chong, Yonuk; Dresselhaus, P. D.; Benz, S. P.; Bonevich, J. E. // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2467 

    Dense, vertically stacked Josephson junction arrays are being developed for voltage metrology applications. We present measurements of the uniformity and reproducibility of Nb/(MoSi[sub 2]/Nb)[sub N] vertically stacked junctions that clarify the superconducting properties of the middle Nb...

  • Realization of a single Josephson junction for Bose–Einstein condensates. Gati, R.; Albiez, M.; Fölling, J.; Hemmerling, B.; Oberthaler, M. K. // Applied Physics B: Lasers & Optics;Feb2006, Vol. 82 Issue 2, p207 

    We report on the realization of a double-well potential for Rubidium-87 Bose-Einstein condensates. The experimental setup allows for the investigation of two different dynamical phenomena known for this system – Josephson oscillations and self-trapping. We give a detailed discussion of...

  • Magnesium diboride superconductor thin film tunnel junctions for superconductive electronics. Kim, Tae Hee; Moodera, Jagadeesh S. // Journal of Applied Physics;12/1/2006, Vol. 100 Issue 11, p113904 

    Based on superconducting MgB2 films with higher critical temperature of 39 K and the advantage of the conventional superconductors, those that follow Bardeen-Cooper-Shrieffer theory, fabrication of quasiparticle, and Josephson tunnel junctions have been investigated. To explore the potential of...

  • Decoherence Due to Nodal Quasiparticles in d-wave Qubits. Fominov, Ya. V.; Golubov, A. A.; Kupriyanov, M. Yu. // JETP Letters;5/25/2003, Vol. 77 Issue 10, p587 

    We study the Josephson junction between two d-wave superconductors, which is discussed as an implementation of a qubit. We propose an approach to calculate the decoherence time due to an intrinsic dissipative process: quantum tunneling between the two minima of the double-well potential excites...

  • Fabrication and characterization of epitaxial NbN/MgO/NbN Josephson tunnel junctions. Kawakami, Akira; Wang, Zhen; Miki, Shigehito // Journal of Applied Physics;11/1/2001, Vol. 90 Issue 9, p4796 

    We fabricated epitaxial NbN/MgO/NbN Josephson tunnel junctions with good tunneling characteristics in the range of J[sub C]=0.2–70 kA/cm[sup 2]. The counter and base NbN electrodes of the tunnel junctions had the same T[sub C] and 20 K resistivity at about 15.7 K and 60 μΩ-cm,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics