Role of the host matrix in the carrier recombination of InGaAsN alloys

Vinattieri, A.; Alderighi, D.; Zamfirescu, M.; Colocci, M.; Polimeni, A.; Capizzi, M.; Gollub, D.; Fischer, M.; Forchel, A.
April 2003
Applied Physics Letters;4/28/2003, Vol. 82 Issue 17, p2805
Academic Journal
We present an experimental study of the carrier recombination dynamics in high-quality (InGa)(AsN)/GaAs and Ga(AsN)/GaAs quantum-well structures after picosecond excitation. A comparison among samples with and without nitrogen and with different In concentration shows that nonradiative channels originated in the host matrix [i.e., (InGa) As and GaAs] play a dominant role in the recombination dynamics of these heterostructures.


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