TITLE

Role of the host matrix in the carrier recombination of InGaAsN alloys

AUTHOR(S)
Vinattieri, A.; Alderighi, D.; Zamfirescu, M.; Colocci, M.; Polimeni, A.; Capizzi, M.; Gollub, D.; Fischer, M.; Forchel, A.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/28/2003, Vol. 82 Issue 17, p2805
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present an experimental study of the carrier recombination dynamics in high-quality (InGa)(AsN)/GaAs and Ga(AsN)/GaAs quantum-well structures after picosecond excitation. A comparison among samples with and without nitrogen and with different In concentration shows that nonradiative channels originated in the host matrix [i.e., (InGa) As and GaAs] play a dominant role in the recombination dynamics of these heterostructures.
ACCESSION #
9555509

 

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