Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys

Pagès, O.; Tite, T.; Bormann, D.; Tournié, E.; Maksimov, O.; Tamargo, M. C.
April 2003
Applied Physics Letters;4/28/2003, Vol. 82 Issue 17, p2808
Academic Journal
The number of N atoms in N-rich regions mostly due to nonrandom N incorporation in GaAsN (N ∼ 4%), referred to as the N[SUBr] rate, is studied using a nonstandard Raman setup that addresses transverse symmetry. The Ga-N optical range shows a two-mode signal which discriminates between the N-poor (N[SUBp]) and N-rich (N[SUBr]) regions. This is discussed via a percolation-based picture for Be-chalcogenide alloys, which exhibit mechanical contrast with regard to the shear modulus. This applies to GaAs-GaN even though the contrast is in the bulk modulus. The balance of N[SUBr]/N[SUBp] strength provides a N[SUBr] rate of ∼ 30%, i.e., much larger than the corresponding Be rate of ∼4% in random Be-based alloys.


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