Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN

Lin, Yow-Jon; Li, Zhen-Dao; Hsu, Chou-Wei; Chien, Feng-Tso; Lee, Ching-Ting; Shao, Sheng-Tien; Chang, Hsing-Cheng
April 2003
Applied Physics Letters;4/28/2003, Vol. 82 Issue 17, p2817
Academic Journal
The mechanism of ohmic contact degradation for the oxidized Au/Ni/Mg-doped GaN under various annealing times has been investigated. According to the results from x-ray photoelectron spectroscopy and the Cserveny's concept, we found that an increase of hole concentration of NiO[SUBx] would lead to the increasing barrier height and the increasing specific contact resistance (ρ[SUBc] of oxidized Au/Ni/Mg-doped GaN. This suggests that the NiO[SUBx] plays an important role in increasing (or reducing) the ρ[SUBc] of oxidized Au/Ni/Mg-doped GaN.


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