TITLE

Terahertz studies of carrier dynamics and dielectric response of n-type, freestanding epitaxial GaN

AUTHOR(S)
Zhang, W.; Azad, Abul K.; Grischkowsky, D.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/28/2003, Vol. 82 Issue 17, p2841
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the characterization of the complex conductivity and dielectric function of GaN by terahertz time-domain spectroscopy. Transmission measurements are performed on an n-type, 180-μm-thick, freestanding GaN crystal. Frequency dependent electron dynamics, power absorption and optical dispersion are observed over the frequency range from 0.1 to 4.0 THz. The measured conductivity is well fit by Drude theory.
ACCESSION #
9555497

 

Related Articles

  • Electron avalanche injection on 10-nm dielectric films. Dori, Leonello; Arienzo, Maurizio; Nguyen, Thao N.; Fischetti, Massimo V.; Stein, Kenneth J. // Journal of Applied Physics;3/1/1987, Vol. 61 Issue 5, p1910 

    Presents information on a study which optimized the doping profile in order to obtain uniform electron avalanche injection for samples with dielectric films as thin as ten nanometers. Discussion on the theoretical doping level at which uniform injection is expected; Results of experimental...

  • Dielectric relaxation in SrTiO[sub 3]-SrMg[sub 1/3]Nb[sub 2/3]O[sub 3] and SrTiO[sub 3]-SrSc[sub 1/2]Ta[sub 1/2]O[sub 3] solid solutions. Lemanov, V. V.; Lemanov, V.V.; Smirnova, E. P.; Smirnova, E.P.; Sotnikov, A. V.; Sotnikov, A.V.; Weihnacht, M. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    Dielectric properties of ceramic samples of (1-x)SrTiO[sub 3]-xSrMg[sub 1/3]Nb[sub 2/3]O[sub 3] and (1-x)SrTiO[sub 3]-xSrSc[sub 1/2]Ta[sub 1/2]O[sub 3] solid solutions were studied at x≤15% and x≤10%, respectively. The real and imaginary parts of the dielectric constant were measured...

  • Characteristic electron thermalization time in dielectric media. Ivliev, S. V.; Lyapidevskii, V. K.; Ryazanov, M. I. // Technical Physics;Jun97, Vol. 42 Issue 6, p624 

    An approximate solution is obtained for the thermalization transport equation for electrons with an energy below the atom ionization potential. The results are used to estimate the thermalization time and the time of removal of the ionization electron from its atom in the gaseous and liquid...

  • Term Limits. Sugden, Mary // Printed Circuit Design;Mar2003, Vol. 20 Issue 3, p20 

    Presents terminologies related to electronics. Meaning of voltage bus; Definition of voltage collector-to-collector; Description of dielectric.

  • Electron-impurity scattering in free-standing quantum wires: Effect of dielectric confinement. Vagner, Pavel; Mosko, Martin // Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3196 

    Investigates the effect of dielectric confinement as a result of electron-impurity scattering in free-standing quantum wires nanostructure. Fourier-transformed scattering potential; Permittivity change; Image charge effect; Electron mobility.

  • USING GUIDED WAVELENGTH AS A BASIS FOR THE DESIGN OF DIELECTRIC ROD ANTENNAS. Everett, Carl L. // Microwave Journal;May2003, Vol. 46 Issue 5, p222 

    Discusses the use of material guided wavelength as the basis of describing specifications for dielectric rod antenna fabrication. Basic specification for the design of dielectric rod antennas; Methodology for the determination of the physical length of an antenna based on guided wavelength;...

  • Structural and dielectric properties of epitaxial Ba[sub 1-x]Sr[sub x]TiO[sub 3]/Bi[sub 4]Ti[sub 3]O[sub 12]/ZrO[sub 2] heterostructures grown on silicon. Canedy, C. L.; Canedy, C.L.; Aggarwal, S.; Li, Hao; Hao Li; Venkatesan, T.; Ramesh, R.; Van Keuls, F. W.; Van Keuls, F.W.; Romanofsky, R. R.; Romanofsky, R.R.; Miranda, F. A.; Miranda, F.A. // Applied Physics Letters;9/4/2000, Vol. 77 Issue 10 

    We report on the dielectric properties of an epitaxial heterostructure comprised of Ba[sub 1-x]Sr[sub x]TiO[sub 3], Bi[sub 4]Ti[sub 3]O[sub 12], and (ZrO[sub 2])[sub 0.91](Y[sub 2]O[sub 3])[sub 0.09] grown on silicon substrates for potential use in microwave devices. Careful x-ray analysis...

  • Untitled.  // Electronic News (10616624);8/14/95, Vol. 41 Issue 2078, p50 

    Informs that Hewlett-Packard has unveiled a series of optocouplers and isolation amplifiers for AC variable-speed motor control. Description of the HCPL and CNW lines; Dielectric withstand-proof voltage information; Price and ordering information.

  • Low-k thin films analyzed using automated SEM sample preparation. Shaapur, Fred; Griffiths, David; Raz, Efrat // Solid State Technology;Oct2000, Vol. 43 Issue 10, p167 

    Examines the challenges posed by a dielectric material, hydrido organo siloxane polymer (HOSP) sample preparation using automated scanning electron microscopy (SEM) analysis. Issues addressed by an automated SEM sample preparation; Problems that might arise from the internal stress within the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics