Sharp ferromagnet/semiconductor interfaces by electrodeposition of Ni thin films onto n-GaAs(001) substrates

Scheck, C.; Evans, P.; Zangari, G.; Schad, R.
April 2003
Applied Physics Letters;4/28/2003, Vol. 82 Issue 17, p2853
Academic Journal
We report on the chemical, electrical, and magnetic properties of Ni/GaAs(001) interfaces prepared using electrodeposition. Electrodeposition is an equilibrium process which thus releases much less energy per absorbed atom than other deposition techniques. This allows preparation of chemically sharp interfaces which otherwise show a high degree of reactivity and interdiffusion. This is demonstrated by the example of Ni grown on GaAs(001). Photoelectron spectroscopy shows the absence of surface segregation of substrate material or diffusion into the Ni layer. This is confirmed by the electrical and magnetic properties of the films.


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