Atomic layer deposition of ZrO[sub 2] on W for metal–insulator–metal capacitor application

Lee, Sang-Yun; Kim, Hyoungsub; McIntyre, Paul C.; Saraswat, Krishna C.; Byun, Jeong-Soo
April 2003
Applied Physics Letters;4/28/2003, Vol. 82 Issue 17, p2874
Academic Journal
A metal-insulator-metal (MIM) capacitor using ZrO[SUB2] on tungsten (W) metal bottom electrode was demonstrated and characterized in this letter. Both ZrO[SUB2] and W metal were synthesized by an atomic layer deposition (ALD) method. High-quality 110 ∼ 115 Å ZrO[SUB2] films were grown uniformly on ALD W using ZrCl[SUB4] and H[SUB2]O precursors at 300°C, and polycrystalline ZrO[SUB2] in the ALD regime could be obtained. A 13∼14-Å-thick interfacial layer between ZrO[SUB2] and W was observed after fabrication, and it was identified as WO[SUBx] through angle-resolved x-ray photoelectron spectroscopy analysis with wet chemical etching. The apparent equivalent oxide thickness was 20 ∼ 21 Å. An effective dielectric constant of 22 ∼ 25 including an interfacial WO[SUBx] layer was obtained by measuring capacitance and thickness of MIM capacitors with Pt top electrodes. High capacitance per area (16 ∼ 17 fF/μm[SUP2]) and low leakage current (10[SUP-7])A/cm[SUP2] at 61 V) were achieved.


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