TITLE

Formation of lateral quantum dot molecules around self-assembled nanoholes

AUTHOR(S)
Songmuang, Rudeesun; Kiravittaya, Suwit; Schmidt, Oliver G.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/28/2003, Vol. 82 Issue 17, p2892
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We fabricate groups of closely spaced self-assembled InAs quantum dots (QDs) -- termed lateral QD molecules-on GaAs (001) by a combination of molecular-beam epitaxy and AsBr[SUB3] in situ etching. An initial array of homogeneously sized nanoholes is created by locally strain-enhanced etching of a GaAs cap layer above InAs QDs. Deposition of InAs onto the nanoholes causes a preferential formation of the InAs QD molecules around the holes. The number of QDs per QD molecule ranges from 2 to 6, depending on the InAs growth conditions. By decreasing the substrate temperature, the number of QDs per QD molecule increases, but the statistical distribution is wider due to a reduced In atom diffusion length. Our photoluminescence investigation documents the nanohole and QD molecule formation step by step and confirms the high crystal quality of these structures. An analysis of the nanohole geometry as a function of annealing time and InAs filling allows us to propose a model for the QD molecule formation process.
ACCESSION #
9555479

 

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