TITLE

Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs

AUTHOR(S)
Tan, Michael Loong Peng
PUB. DATE
January 2013
SOURCE
Journal of Nanomaterials;2013, p1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Long channel carbon nanotube transistor (CNT) can be used to overcome the high electric field effects in nanoscale length silicon channel. When maximum electric field is reduced, the gate of a field-effect transistor (FET) is able to gain control of the channel at varying drain bias. The device performance of a zigzag CNTFET with the same unit area as a nanoscale silicon metaloxide semiconductor field-effect transistor (MOSFET) channel is assessed qualitatively. The drain characteristic of CNTFET and MOSFET device models as well as fabricated CNTFET device are explored over a wide range of drain and gate biases. The results obtained show that long channel nanotubes can significantly reduce the drain-induced barrier lowering (DIBL) effects in silicon MOSFET while sustaining the same unit area at higher current density.
ACCESSION #
95401665

 

Related Articles

  • A Novel Source/Drain-to-Gate Non-overlap MOSFET to Reduce Gate Leakage Current in Nano Regime. Rana, Ashwani K.; Chand, Narottam; Kapoor, Vinod // World Academy of Science, Engineering & Technology;2011, Issue 58, p981 

    In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The...

  • Interface model for HfO2 gate stack from first principles calculations and its application to nanoscale device simulations. Shin, Mincheol; Yongjin Park; Ki-jeong Kong; Hyunju Chang // Applied Physics Letters;4/25/2011, Vol. 98 Issue 17, p173501 

    Rigorous first-principles calculations are performed to address the interface properties of HfO2 gate stacks with interlayer (IL). The band-gap and dielectric constant change nonabruptly at the HfO2/IL and IL/Si interfaces with transition regions of a few angstrom wide. Device-level simulations...

  • Alternating current-to-direct current power conversion by single-wall carbon nanotube diodes. Mallick, Govind; Griep, Mark H.; Ajayan, Pulickel M.; Karna, Shashi P. // Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p233109 

    We report the observation of alternating current-to-direct current half-wave conversion in the range of 1–1000 Hz by single-wall carbon nanotube diode rectifiers, which show a high degree of rectification (∼105). The nanoscale diode rectifier demonstrates a half-wave power conversion...

  • A NOVEL FULL ADDER CELL BASED ON CARBON NANOTUBE FIELD EFFECT TRANSISTORS. Ghorbani, Ali; Sarkhosh, Mehdi; Fayyazi, Elnaz; Mahmoudi, Neda; Keshavarzian, Peiman // International Journal of VLSI Design & Communication Systems;Jun2012, Vol. 3 Issue 3, p33 

    Presenting a novel full adder cell will be increases all the arithmetic logic unit performance. In this paper, We present two new full adder cell designs using carbon nanotube field effect transistors (CNTFETs). In the first design we have 42 transistors and 5 pull-up resistance so that we have...

  • Performance Evaluation of MISISFET- TCAD Simulation. Chaudhary, Tarun; Khanna, Gargi; Chandel, Rajeevan // International Journal of Computer Applications;6/1/2012, Vol. 47, p45 

    A novel device n-MISISFET with a 'dielectric stack' instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with biasing for the novel n-MISISFET for various substrate doping...

  • Comparison between Si/SiO and InP/AlO based MOSFETs. Akbari Tochaei, A.; Arabshahi, H.; Benam, M.; Vatan-Khahan, A.; Abedininia, M. // Journal of Experimental & Theoretical Physics;Nov2016, Vol. 123 Issue 5, p869 

    Electron transport properties of InP-based MOSFET as a new channel material with AlO as a high- k dielectric oxide layer in comparison with Si-based MOSFET are studied by the ensemble Monte Carlo simulation method in which the conduction band valleys in InP are based on three valley models with...

  • Effect of Coulomb scattering in n-type silicon inversion layers. Manzini, S. // Journal of Applied Physics;1/15/1985, Vol. 57 Issue 2, p411 

    Presents the experimental results of surface mobility in n-channel metal-oxide-semiconductor field-effect transistors subjected to high electric field stress. Effect of Coulomb scattering on n-type silicon inversion layers; Significance of the electron injection technique; Comparison of the...

  • Direct determination of flat-band voltage for metal/high κ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation. Chang, C.-L.; Lee, W. C.; Chu, L. K.; Hong, M.; Kwo, J.; Chang, Y.-M. // Applied Physics Letters;4/25/2011, Vol. 98 Issue 17, p171902 

    We have employed electric-field-induced second-harmonic (EFISH) generation to determine the flat-band voltage (VFB) of Cr/ALD-Al2O3/MBE-HfO2/n-Si (001) MOS structure. Due to the phase sensitivity of EFISH signal to the electric field in the space charge region, the VFB of -1.20±0.07 V was...

  • Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge. T. Hatakeyama; M. Sometani; K. Fukuda; H. Okumura; T. Kimoto // Materials Science Forum;2014, Vol. 778-780, p424 

    Constant-capacitance deep-level transient spectroscopy was carried out to characterize in detail interface states close to the conduction band edge in SiO2/SiC structures. The measured results are summarized as follows: (1) The capture of electrons by the interface states proceeds...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics