TITLE

Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD

AUTHOR(S)
D. Li; G. L. Liu; Y. Yang; J. H. Wu; Z. R. Huang
PUB. DATE
January 2013
SOURCE
Journal of Nanomaterials;2013, p1
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The nanoscale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film. The atomic force microscopy (AFM) was used to investigate the surface topography of the as-deposited Si film. The initial nucleation and growth process of the film was described. The continuous film had been already formed when the film thickness was 10 nm. The growth of the deposited Si film accorded with the Volmer-Weber growth mode.
ACCESSION #
95401356

 

Related Articles

  • Melting of polymer single crystals studied by dynamic Monte Carlo simulations. Ren, Y.; Ma, A.; Li, J.; Jiang, X.; Ma, Y.; Toda, A.; Hu, W. // European Physical Journal E -- Soft Matter;Nov2010, Vol. 33 Issue 3, p189 

    We report dynamic Monte Carlo simulations of lattice polymers melting from a metastable chain-folded lamellar single crystal. The single crystal was raised and then melted in an ultrathin film of polymers wetting on a solid substrate, mimicking the melting observations made by using Atomic Force...

  • Growth of GaInAsP/GaAs quantum dot arrays by ion beam deposition. Sysoev, I.; Lunina, M.; Alfimova, D.; Blagin, A.; Gusev, D.; Seredin, B. // Inorganic Materials;Mar2014, Vol. 50 Issue 3, p215 

    Experimental data are presented that demonstrate the possibility of producing GaInAsP quantum dots on GaAs by ion beam deposition. The morphology of the quantum dots and the effect of GaAs substrate temperature on parameters of GaInAsP quantum dot arrays have been studied by atomic force...

  • High aspect ratio AFM Probe processing by helium-ion-beam induced deposition. Onishi, Keiko; Nagano, Syoko; Fujita, Daisuke; Guo, Hongxuan // Microscopy;Nov2014 Supplement, Vol. 63 Issue suppl_1, pi30 

    A Scanning Helium Ion Microscope (SHIM) is a high resolution surface observation instrument similar to a Scanning Electron Microscope (SEM) since both instruments employ finely focused particle beams of ions or electrons [1]. The apparent difference is that SHIMs can be used not only for a...

  • In situ conductance measurements of copper phthalocyanine thin film growth on sapphire [0001]. Murdey, Richard; Sato, Naoki // Journal of Chemical Physics;6/21/2011, Vol. 134 Issue 23, p234702 

    The current flowing through a thin film of copper phthalocyanine vacuum deposited on a single crystal sapphire [0001] surface was measured during film growth from 0 to 93 nm. The results, expressed as conductance vs. nominal film thickness, indicate three distinct film growth regions. Conductive...

  • Evolution of morphology of surface during film growth of polycrystalline silicon with hemispherical grains. Novak, A.; Novak, V. // Technical Physics Letters;Jul2014, Vol. 40 Issue 7, p549 

    Evolution of surface morphology during film growth of polycrystalline silicon with hemispherical grains (HSG-Si films) is studied using scaling analysis of surface images obtained by atomic-force microscopy. It has been found from the height-height correlation functions that roughness exponent...

  • Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach. Patella, F.; Arciprete, F.; Placidi, E.; Fanfoni, M.; Balzarotti, A.; Vinattieri, A.; Cavigli, L.; Abbarchi, M.; Gurioli, M.; Lunghi, L.; Gerardino, A. // Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p231904 

    We report on single dot microphotoluminescence (μPL) emission at low temperature and low power from InAs dots grown by molecular beam epitaxy in nanoscale holes of a SiO2 mask deposited on GaAs(001). By comparing atomic force microscopy measurements with μPL data, we show that the dot...

  • X-ray analysis of strain distribution in two-step grown epitaxial SrTiO3 thin films. Panomsuwan, Gasidit; Osamu Takai; Nagahiro Saito // Applied Physics Letters;8/4/2014, Vol. 105 Issue 5, p1 

    Epitaxial SrTiO3 (STO) thin films were grown on (001)-oriented LaAlO3 (LAO) substrates using a two-step growth method by ion beam sputter deposition. An STO buffer layer was initially grown on the LAO substrate at a low temperature of 150 °C prior to growing the STO main layer at 750 °C....

  • Optimization of High-Quality AIN Epitaxially Grown on (0001) Sapphire by Metal-Organic Vapor-Phase Epitaxy. Xi, Y. A.; Chen, K. X.; Mont, F.; Kim, J. K.; Schubert, E. F.; Wetzel, C.; Liu, W.; Li, X.; Smart, J. A. // Journal of Electronic Materials;Apr2007, Vol. 36 Issue 4, p533 

    A systematic study is performed to optimize aluminum nitride (AlN) epilayers grown on (0001) sapphire by metal-organic vapor-phase epitaxy. Specifically, the impact of the AlN nucleation conditions on the crystalline quality and surface morphology of AlN epilayers is studied. Atomic force...

  • Threshold Behavior of the Formation of Nanometer Islands in a Ge/Si(100) System in the Presence of Sb. Cirlin, G. E.; Dubrovski&ibreve;, V. G.; Tonkikh, A. A.; Sibirev, N. V.; Ustinov, V. M.; Werner, P. // Semiconductors;May2005, Vol. 39 Issue 5, p547 

    Atomic-force microscopy is used to study the behavior of an array of Ge islands formed by molecular-beam epitaxy on an Si (100) surface in the presence of an antimony flux incident on the surface. It is shown that, as the Sb flux increases to a certain critical level, the surface density of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics