TITLE

Silica waveguides fabricated by oxidization of selectively anodized porous silicon

AUTHOR(S)
Nagata, Seiichi; Matsushita, Shinobu; Saito, Kazuya; Ohshita, Yoshio; Maeda, Yoshinobu; Yamaguchi, Masafumi; Ikushima, Akira J.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2559
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
To keep the current density at the porous silicon (PS) and Si interface constant, independent of anodization depth, a pulse anodization method has been developed. In this method, a pulse current is controlled to be proportional to the PS/Si interface area. This method was applied to produce two-layered PS with different pore sizes. Titanium organic molecules were selectively doped into larger sized pores. By oxidization, the PS was transformed into a densified silica waveguide and its core, and cladding was automatically formed, without significant volume change. Very few breaking defects have been found in the waveguides. In addition, bends in the Si substrates were small. Optical loss in the slab waveguides was 0.3 dB/cm at 632.8 nm.
ACCESSION #
9518414

 

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