Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes

Chitnis, A.; Zhang, J. P.; Adivarahan, V.; Shatalov, M.; Wu, S.; Pachipulusu, R.; Mandavilli, V.; Khan, M. Asif
April 2003
Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2565
Academic Journal
We report on AlGaN multiple-quantum-well light-emitting diodes over sapphire with peak emission at 325 nm. A pulsed-atomic-layer-epitaxy growth process was used to improve the material quality of the AlN buffer and the AlN/AlGaN strain-relief layers for reducing the nonradiative recombination. In addition, a modified device epilayer structure was used to improve the carrier confinement and the hole injection. A 40% improvement of external quantum efficiency is obtained, resulting in record high optical powers of 10.2 mW at a pulsed pump current of 1 A.


Related Articles

  • GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy. Wang, C.A.; Choi, H.K. // Applied Physics Letters;2/17/1997, Vol. 70 Issue 7, p802 

    Focuses on the gallium-indium-arsenide-antimony (GaInAsSb) multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy. Use of organometallic vapor phase epitaxy (OMVPE); Ways to evaluate the quality of GaInAsSb quantum wells; Performance of the OMVPE-grown GaInAsSb diode lasers.

  • High-temperature operation of strained Si[sub 0.65]Ge[sub 0.35]/Si(111) p-type.... Fukatsu, S.; Usami, N. // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p967 

    Examines the electroluminescence (EL) of strained Si[sub 0.65]Ge[sub 0.35]/Si(111) p-type multiple quantum well light emitting diode grown by molecular beam epitaxy. Characteristics of the EL spectra at varied temperatures; Behavior exhibited by the alloy band in the spectra emission intensity;...

  • AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy. Jmerik, V. N.; Mizerov, A. M.; Shubina, T. V.; Sakharov, A. V.; Sitnikova, A. A.; Kop'ev, P. S.; Ivanov, S. V.; Lutsenko, E. V.; Danilchyk, A. V.; Rzheutskii, N. V.; Yablonskii, G. P. // Semiconductors;Dec2008, Vol. 42 Issue 12, p1420 

    Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of...

  • Efficient 300 K light-emitting diodes at λ∼5 and ∼8 μm from InAs/In(As[sub 1-x]Sb[sub x]) single quantum wells. Tang, P. J. P.; Hardaway, H.; Heber, J.; Phillips, C. C.; Pullin, M. J.; Stradling, R. A.; Yuen, W. T.; Hart, L. // Applied Physics Letters;6/29/1998, Vol. 72 Issue 26 

    300 K light-emitting diodes which emit at 5 and 8 μm with quasi-cw output powers of up to 50 and 24 μW, respectively, are reported. The devices have a single molecular beam epitaxy grown InAs/In(As, Sb) quantum well in the active region with a strong type-IIa band alignment giving mid-IR...

  • GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy. Grandjean, N.; Massies, J. // Applied Physics Letters;6/14/1999, Vol. 74 Issue 24, p3616 

    Discusses the growth of gallium indium nitride (GaInN)/gallium nitride (GaN) multiple-quantum-well (MQW) light-emitting diodes by molecular beam epitaxy on c-plane sapphire using ammonia (NH[sub 3]). Photoluminescence performed on both GaInN thin layers and GaInN/GaN MQW; Transmission electron...

  • Growth and characterization of mid-infrared InGaAs/InAlAs strained triple-quantum-well light-emitting diodes grown on lattice-mismatched GaAs substrates. Grietens, B.; Van Hoof, C.; Van Daele, P.; Borghs, G. // Journal of Applied Physics;10/1/1996, Vol. 80 Issue 7, p4177 

    Presents a study that investigated the growth, structural, electrical and optical characterization of strained triple-quantum-well light emitting diodes. Use of molecular beam epitaxy to grow the heterostructures; Optical performance of the diodes.

  • Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy. Naranjo, F. B.; Ferna´ndez, S.; Sa´nchez-Garcı´a, M. A.; Calle, F.; Calleja, E. // Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2198 

    A resonant-cavity InGaN/GaN multiple-quantum-well (MQW) light-emitting diode, incorporating a semitransparent Bragg reflector, has been grown by molecular-beam epitaxy. A 30% reflectivity AlGaN/GaN distributed Bragg reflector and a Ni coating were used as bottom and top mirrors, for backside...

  • Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. Krier, A.; Stone, M.; Zhuang, Q. D.; Liu, Po-Wei; Tsai, G.; Lin, H. H. // Applied Physics Letters;8/28/2006, Vol. 89 Issue 9, p091110 

    Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 μm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at...

  • InGaN-Based Nanorod Array Light Emitting Diodes. Hwa-Mok Kim; Yong Hoon Cho; Deuk Young Kim; Tae Won Kang; Kwan Soo Chung // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1515 

    We demonstrate the realization of the high-brightness and high-efficiency light emitting diodes (LEDs) using dislocation-free indium gallium nitride (InGaN)/gallium nitride (GaN) multi-quantum-well (MQW) nanorod (NR) arrays by metal organic-hydride vapor phase epitaxy (MO-HVPE). MQW NR arrays...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics