TITLE

Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes

AUTHOR(S)
Chitnis, A.; Zhang, J. P.; Adivarahan, V.; Shatalov, M.; Wu, S.; Pachipulusu, R.; Mandavilli, V.; Khan, M. Asif
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2565
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on AlGaN multiple-quantum-well light-emitting diodes over sapphire with peak emission at 325 nm. A pulsed-atomic-layer-epitaxy growth process was used to improve the material quality of the AlN buffer and the AlN/AlGaN strain-relief layers for reducing the nonradiative recombination. In addition, a modified device epilayer structure was used to improve the carrier confinement and the hole injection. A 40% improvement of external quantum efficiency is obtained, resulting in record high optical powers of 10.2 mW at a pulsed pump current of 1 A.
ACCESSION #
9518412

 

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