TITLE

Charge tunable ErAs islands for backgate isolation in AlGaAs heterostructures

AUTHOR(S)
Dorn, A.; Peter, M.; Kicin, S.; Ihn, T.; Ensslin, K.; Driscoll, D.; Gossard, A. C.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2631
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Self-assembled ErAs islands on GaAs embedded between a backgate electrode and a two-dimensional electron gas (2DEG) were grown by molecular-beam epitaxy. The nanometer-sized islands form Schottky barriers with overlapping depletion regions, which insulate the backgate from the 2DEG. From temperature-dependent measurements and charging experiments the effective barrier height between the islands and the Schottky barrier height onto the islands could be determined. In addition, the effects of illumination were studied.
ACCESSION #
9518389

 

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