TITLE

Effect of growth rate and gallium source on GaAsN

AUTHOR(S)
Kurtz, Sarah; Geisz, J. F.; Keyes, B. M.; Metzger, W. K.; Friedman, D. J.; Olson, J. M.; Ptak, A. J.; King, R. R.; Karam, N. H.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2634
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs[SUB12-x] N[SUBx] with x = 0.2% is grown by metal-organic chemical vapor deposition with growth rates between 2 and 7 μm/h and with two gallium sources. The GaAsN grown with trimethylgallium at high growth rates shows increased carbon contamination (>10[SUP17] cm[SUP-3]), low photoluminescent lifetimes (∼0.2 ns), and high background acceptor concentrations (>10[SUP17] cm[SUP-3]). The GaAsN is improved if it is grown with a lower growth rate or if triethylgallium is used, resulting in lower carbon contamination (∼ 10[SUP16] cm[SUP-3], longer photoluminescent lifetimes (2-9 ns), and slightly lower background acceptor concentrations (< 10[SUP17] cm[SUP-3]). The lifetime decreases with carbon concentration, implying that the low lifetimes in this sample set may be caused by nonradiative recombination at a center containing both N and C.
ACCESSION #
9518388

 

Related Articles

  • Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition. Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D. // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p945 

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using metalorganic chemical vapor deposition. A wet chemical etching process was used to expose the intersecting (111)Ga and (111)Ga planes with 6 μm periodicity. Charge collection microscopy was used to...

  • Grown-in defects in multi-epilayer GaAs grown by metalorganic chemical vapor deposition under different growth conditions. Li, Sheng S.; Lee, D. H.; Choi, C. G.; Andrews, J. E. // Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1180 

    Studies of the grown-in defects in multi-epilayer GaAs (with/without a buffer layer) grown by metalorganic chemical vapor deposition under different [AsH3]/[TMGa] ratios, growth temperatures, and growth rates have been made in this letter by the deep level transient spectroscopy method. For...

  • Laser selective deposition of GaAs on Si. Bedair, S. M.; Whisnant, J. K.; Karam, N. H.; Tischler, M. A.; Katsuyama, T. // Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p174 

    GaAs films have been selectively deposited on Si substrates by laser induced chemical vapor deposition. An Ar+ laser was used to provide the required local heating on an otherwise relatively cool substrate to deposit GaAs spots and write GaAs lines. The deposition parameters were adjusted to...

  • Characterization of GaAs grown by metalorganic chemical vapor deposition on Si-on-insulator. Pearton, S. J.; Vernon, S. M.; Short, K. T.; Brown, J. M.; Abernathy, C. R.; Caruso, R.; Chu, S. N. G.; Haven, V. E.; Bunker, S. N. // Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1188 

    Epitaxial GaAs layers were grown by metalorganic chemical vapor deposition on Si-on-insulator structures formed by high dose oxygen implantation. The quality of the GaAs films was examined as a function of layer thickness (0.01–4 μm). The surface morphology, ion backscattering yield,...

  • Structure and polarity of {111} CdTe on {100} GaAs. Glanvill, S. R.; Rossouw, C. J.; Kwietniak, M. S.; Pain, G. N.; Warminski, T.; Wielunski, L. S. // Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p619 

    Reports on the use of ultramicrotome techniques to prepare thin cross sections of a CdTe epilayer deposited by metalorganic chemical vapor deposition onto a gallium arsenide substrate. Preparation of the epilayers; Results.

  • Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition. Mimila-Arroyo, J.; Lusson, A.; Chevallier, J.; Barbe´, M.; Theys, B.; Jomard, F.; Bland, S. W. // Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3095 

    Carbon doping efficiency in GaAs grown by metalorganic chemical vapor deposition using intrinsic and extrinsic doping sources is studied. Independent of the carbon source, carbon hydrogen complexes are systematically present and depending on the growth conditions, carbon dimers can be present...

  • GaAs growth by atomic layer epitaxy using diethylgalliumchloride. Mori, Kazuo; Yoshida, Masaji; Usui, Akira; Terao, Hiroshi // Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p27 

    GaAs is grown by metalorganic atomic layer epitaxy (MOALE) using diethylgalliumchloride (DEGaCl) as a new MO source material for ALE and AsH3 in a horizontal, low-pressure metalorganic chemical vapor deposition system. Monolayer-unit growth has been obtained over a wide range of growth...

  • Uniformity in the electrical characteristics of GaAs/AlAs tunnel structures grown by metalorganic chemical vapor deposition. Bonnefoi, A. R.; McGill, T. C.; Burnham, R. D. // Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p307 

    Uniformity of current-voltage characteristics in GaAs/AlAs tunnel structures grown by metalorganic chemical vapor deposition has been investigated by studying electronic transport perpendicular to GaAs layers separated by one or two AlAs barriers. For each sample, measurements of the...

  • High-energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1-x barriers (hω>=EL, EX). Hsieh, K. C.; Kaliski, R. W.; Holonyak, N.; Burnham, R. D.; Thornton, R. L.; Paoli, T. L. // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p943 

    Data are presented showing that a small GaAs quantum well (Lz≊80 Å), the middle third of which is replaced with a (Si2)x(GaAs)1-x ‘‘barrier’’ (27 Å, x>=0.2), is capable of stimulated emission (77 K) at energies hω>=EL(Si+GaAs), EX(Si+GaAs).

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics