Analysis of recombination centers in epitaxial silicon thin-film solar cells by temperature-dependent quantum efficiency measurements

Wagner, T. A.; Rau, U.
April 2003
Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2637
Academic Journal
Temperature-dependent quantum efficiency (TQE) measurements are used to investigate recombination in epitaxial silicon thin-film solar cells grown by ion-assisted deposition. Analysis of the experimental results unveils that the diffusion length in this material is dominated by Shockley-Read-Hall recombination via relatively shallow defects with activation energies of 70-110 and 160-210 meV, respectively. The device performance at room temperature is controlled by the concentration of the deeper one of those two defects. The TQE method proves to be a reliable variation of lifetime spectroscopy allowing for the quantitative identification of recombination active defects in completed solar cells.


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