TITLE

Vacancy–oxygen complex in Si[sub 1-x]Ge[sub x] crystals

AUTHOR(S)
Markevich, V. P.; Peaker, A. R.; Murin, L. I.; Abrosimov, N. V.
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2652
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electronic properties of the vacancy-oxygen complex in unstrained Si[SUB1-x]Ge[SUBx] crystals (0
ACCESSION #
9518382

 

Related Articles

  • Impact ionization in silicon. Cartier, E.; Fischetti, M.V.; Eklund, E.A.; McFeely, F.R. // Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3339 

    Examines the impact ionization process in silicon. Distinction between the ionization and electron phonon scattering rate; Use of joint density of states in generating secondary and recoil electrons following ionization; Relationship between pair production rate and x-ray photoemission...

  • Theoretical study on threshold energy and impact ionization coefficient for electrons in.... Keesoo Yeom; Hinckley, John M. // Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p2985 

    Examines the calculation threshold energy and electron impact ionization coefficient for unstrained and strained Si[sub 1-x]Ge[sub x] on {100} silicon substrates. Use of nonparabolic and ellipsoidal band structure for the conduction band; Effect of the strain on band degeneracy; Dominance of...

  • Deterministic modeling of impact ionization with a random-k approximation and the multiband Boltzmann equation. Wu, Yu-Jen; Goldsman, Neil // Journal of Applied Physics;10/15/1995, Vol. 78 Issue 8, p5174 

    Focuses on a study which determined the impact ionization rate to reflect the multiband density of states in silicon. Techniques to determine impact ionization; Formulation of the Boltzmann transport equation; Results and discussion.

  • Electron-impact total ionization cross sections of silicon and germanium hydrides. Ali, M. A.; Kim, Y.-K. // Journal of Chemical Physics;6/15/1997, Vol. 106 Issue 23, p9602 

    Calculates the electron-impact total ionization cross sections of some silicon and germanium compounds. Application of a new theoretical model for wide range of molecules; Presentation of the total ionization cross sections of the compounds for incident electrdon energies; Determination of...

  • White electroluminescence from C- and Si-rich thin silicon oxides. Jambois, O.; Garrido, B.; Pellegrino, P.; Carreras, Josep; Pérez-Rodríguez, A.; Montserrat, J.; Bonafos, C.; BenAssayag, G.; Schamm, S. // Applied Physics Letters;12/18/2006, Vol. 89 Issue 25, p253124 

    White electroluminescence from carbon- and silicon-rich silicon oxide layers is reported. The films were fabricated by Si and C ion implantation at low energy in 40 nm thick SiO2, followed by annealing at 1100 °C. Structural and optical studies allow assigning the electroluminescence to Si...

  • Avalanche multiplication of charge carriers in nanostructured porous silicon. Timokhov, D. F.; Timokhov, F. P. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2003, Vol. 6 Issue 3, p307 

    The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity of an electrical field correspond to the diffusion mechanism of...

  • Ion chemistry of tetramethylsilane (TMS) by electron impact. Saini, Sham Singh; Bhatt, Praveen // Golden Research Thoughts;Sep2013, Vol. 3 Issue 3, p1 

    We studied electron impact ionization of tetramethylsilane (TMS), Si(CH 3 ) 4, which is utilized in plasma polymerization applications, using a semi empirical Jain-Khare theoretical technique. Absolute partial cross sections for the formation of all fragment ions were measured by Jain-Khare...

  • Production and loss mechanisms of SiClX etch products during silicon etching in a high density HBr/Cl2/O2 plasma. Cunge, G.; Kogelschatz, M.; Sadeghi, N. // Journal of Applied Physics;10/15/2004, Vol. 96 Issue 8, p4578 

    SiClX (X=0–2) radicals’ concentrations have been measured by broadband ultraviolet absorption spectroscopy during the etching of 200 mm diameter silicon wafers in HBr/Cl2/O2 plasmas. We report the variations of the concentrations of these radicals as a function of the radio...

  • High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation. Akturk, Akin; Goldsman, Neil; Potbhare, Siddharth; Lelis, Aivars // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    We present 4H-SiC electron and hole Monte Carlo transport calculations that are obtained using the density functional theory (DFT) calculated conduction and valence band density-of-states (DOS) curves. The transport properties include room temperature average electron-hole velocities, energies,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics