Size-independent spin switching field using synthetic antiferromagnets

Inomata, K.; Koike, N.; Nozaki, T.; Abe, S.; Tezuka, N.
April 2003
Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2667
Academic Journal
The arrays of the synthetic antiferromagnetic (SyAF) patterned bits consisting of (Co[SUB90]Fe[SUB10] (t[SUB1] nm)/Ru (d nm)/Co[SUB90]Fe[SUB10] (t[SUB2] nm) were successfully fabricated with micron to submicron sizes and different aspect ratios. Magnetization switching field H[SUBsw] and magnetic domain structure were investigated using magneto-optical Kerr effect and magnetic force microscopy (MFM), respectively. It was demonstrated that the strongly AF-coupled SyAF with aspect ratio k = 1 creates size-independent H[SUBsw] down to submicron sizes fabricated, which is understood by zero demagnetization field for k = 1 and single domain structure, observed by MFM. The size-independent switching field demonstrates the predominance of the SyAF for spintronics devices, requiring a low switching field and stabilized single domain structure for small bit sizes such as ultrahigh density magnetic random access memories and spin transistors.


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