Bias dependence of tunneling magnetoresistance on ferromagnetic electrode thickness

Zhu, T.; Xiang, X.; Xiao, John Q.
April 2003
Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2676
Academic Journal
We have investigated the bias dependence of the tunneling magnetoresistance (TMR) in Py/CoFe(t()/Al[SUB2]O[SUB3]/Py magnetic tunneling junctions with a wedge-shaped CoFe layer. The value of TMR increases slowly with CoFe thickness and saturates at t ⩾ 2.3 nm, implying a significant bulk-like contribution in spin-dependent tunneling. The bias dependence of TMR also shows a similar trend as a function of CoFe thickness, and becomes independent of CoFe thickness at t ⩾ 2.3 nm. The extracted tunneling characteristic length decreases slightly with increasing bias voltage due to the hot electron excitations.


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