TITLE

Simulation of Schottky barrier tunnel transistor using simple boundary condition

AUTHOR(S)
Jang, Moongyu; Kang, Kicheon; Lee, Seongjae; Park, Kyoungwan
PUB. DATE
April 2003
SOURCE
Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2718
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The current-voltage characteristics of a Schottky barrier tunnel transistor (SBTT) are simulated by considering the internal voltage drop at the Schottky barrier and using the current continuity condition between the tunneling and channel current. The numerical results show typical behaviors as can be found in many experimental results. From these results, a significantly higher threshold voltage is expected for the SBTT compared to the conventional metal-oxide-semiconductor field-effect transistors, because of the suppression of the tunneling current at low gate voltage. For the nanometer-size device application, a metal gate should be used to decrease the threshold voltage.
ACCESSION #
9518360

 

Related Articles

  • Density-of-states anomaly and tunneling conductance of Au/p-GaAs[sub 0.94]Sb[sub 0.06] contacts near the metal�insulator transition. Allen, T. Yu.; Nazhmudinov, Kh. G.; Polyanskaya, T. A. // Semiconductors;Dec98, Vol. 32 Issue 12, p1270 

    The tunneling-current anomaly in Au/p-GaAs[sub 0.94]Sb[sub 0.06] contacts at zero bias voltage (V?0) is investigated. Epitaxial layers of the solid solution GaAs[sub 0.94]Sb[sub 0.06] are doped with germanium and have a conductivity close to that at the metal-insulator transition. The squareroot...

  • Electrical properties of metal-semiconductor multilayers with amorphous structure. Kalinin, Yu. E.; Korolev, K. G.; Sitnikov, A. V. // Technical Physics Letters;Mar2006, Vol. 32 Issue 3, p262 

    The electrical properties of amorphous Co0.45Fe0.45Zr0.1/a-Si multilayer structures have been studied. It is established that the regime of inelastic resonance tunneling via localized states near the Fermi level is realized in these structures in the temperature interval from 150–220 K....

  • On the Role of Tunneling in Metal—Semiconductor Nanocontacts. Vostokov, N. V.; Shashkin, V. I. // Journal of Experimental & Theoretical Physics;Jul2004, Vol. 99 Issue 1, p211 

    The shape of the contact potential that arises at the interface between semiconductor and a metal nanoparticle is calculated in the approximation of complete depletion. The particle represents a sphere of radius a < S, where S is the thickness of the depletion layer in the semiconductor in the...

  • Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height. Lin, J.-Y. Jason; Roy, Arunanshu M.; Nainani, Aneesh; Sun, Yun; Saraswat, Krishna C. // Applied Physics Letters;2/28/2011, Vol. 98 Issue 9, p092113 

    Metal contacts to n-type Ge have poor performance due to the Fermi level pinning near the Ge valence band at metal/Ge interfaces. The electron barrier height can be reduced by inserting ultrathin dielectrics at the metal-semiconductor interface. However, this technique introduces tunneling...

  • Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes. Pipinys, P.; Lapeika, V. // Advances in Condensed Matter Physics;2010, p1 

    Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the...

  • Transport Properties of the LaSrNiO[sub 4 � d] Ceramics. Ivanova, T. A.; Jacyna-Onyszkiewicz, I.; Yablokov, Yu. V. // Physics of the Solid State;Sep2002, Vol. 44 Issue 9, p1622 

    The temperature dependence of electrical resistivity in LaSrNiO[sub 4�d] ceramics synthesized using various techniques and subjected to heat treatment is studied. The occurrence of a metal-semiconductor transition is shown to be accounted for by the Anderson carrier localization originating...

  • Effect of hydrogenation on the properties of metal�GaAs Schottky barrier contacts. Bozhkov, V. G.; Kagadei, V. A.; Torkhov, N. A. // Semiconductors;Nov98, Vol. 32 Issue 11, p1196 

    The effect of hydrogenation (incorporation of atomic hydrogen) on the properties of n-GaAs and the characteristics of Au-GaAs Schottky barrier contacts (the ideality factor of the current-voltage characteristic n, the barrier height f[sub b], and the reverse voltage V[sub r] at a current of 10...

  • Measurement of Au/GaAs/AlxGa1-xAs hetero-Schottky barrier height and GaAs/AlxGa1-xAs conduction-band discontinuity. Chen, H. Z.; Wang, H.; Ghaffari, A.; Morkoç, H.; Yariv, A. // Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p990 

    A new hetero-Schottky structure for the study of Schottky barriers and heterojunctions is discussed. Photoelectric measurements have revealed a correlation between Au/GaAs and Au/AlxGa1-xAs Schottky barrier heights and GaAs/AlxGa1-xAs heterojunction band offsets. The conduction-band...

  • Optical amplification in a planar multichannel Mach—Zehnder interferometer based on metal—semiconductor—metal structures. Ushakov, N. M.; Kravtsov, K. Yu. // Technical Physics Letters;Jan98, Vol. 24 Issue 1, p49 

    This paper describes a new optoelectronic device—an optical transistor that provides power amplification of output visible radiation. The optical transistor is structurally based on a metallized semiconductor plate with a microchannel gap in the form of a planar Mach-Zehnder...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics