TITLE

Kyocera focuses on cheaper Si3N4 components

PUB. DATE
August 1995
SOURCE
Ceramic Industry;Aug95, Vol. 145 Issue 3, p17
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
Reports on Kyoto, Japan-based Kyocera Corp.'s expansion of production capacity for silicon nitride engine components at its Kokubu manufacturing facility. Development of a manufacturing process which would enable silicon nitride engine components to be produced at a cost comparable to that for special steel parts; Company's focus on the low-cost production of ceramic components for diesel engines.
ACCESSION #
9508282649

 

Related Articles

  • Growth and characterization of silicon thin films employing supersonic jets of SiH4 on... Mullins, C.B.; Pacheco, K.A. // Journal of Applied Physics;12/15/1997, Vol. 82 Issue 12, p6281 

    Studies the growth and characterization of silicon thin films employing supersonic jets of SiH4 on polysilicon and Si(100). Experimental procedure used; Definition of the reaction probability; Results and discussion of the study.

  • Passivation effect of silicon nitride against copper diffusion. Miyazaki, Hiroshi; Kojima, Hisao // Journal of Applied Physics;6/15/1997, Vol. 81 Issue 12, p7746 

    Evaluates the passivation effect of plasma-enhanced chemical-vapor-deposited silicon nitride using secondary ion mass spectrometry and atomic absorption spectrometry. Detection of copper contamination; Use of copper in ultralarge scale integrated conductors; Effect of copper contamination on...

  • Silicon nitride--A new breed of ceramics. Henry, Anna // Foundry Management & Technology;Sep97, Vol. 125 Issue 9, p56 

    Presents information pertaining to foundries, while focusing on silicon nitride in the ceramics industry. Temperature capacity of silicon nitride; What are some advantages of using silicon nitride; Reference to an arrangement between the Pyrotek and Kyocera companies.

  • Kyocera Corp.  // Ceramic Industry;May98, Vol. 148 Issue 5, p4 

    Reports on Tokyo, Japan-based Kyocera Corp.'s plan to invest 10 billion yen at a plant in Kagoshima, western Japan to build a facility for the production of semiconductor packages.

  • Small things come in profitable packages. Allen, Mike // San Diego Business Journal;6/5/95, Vol. 16 Issue 23, p6 

    Focuses on Japanese-based manufacturer of semiconductor packages Kyocera Corp. Pledge for the sponsorship of the Olympic Training Center in Chula Vista, Calif.; Company history; Company revenue; Manufacturing of specialized ceramic packages in the San Diego, Calif. plant; Location of the...

  • Kyocera marks 25 years in United States.  // Ceramic Industry;May97, Vol. 147 Issue 5, p17 

    Celebrates the 25th anniversary of operation of Kyocera Corporation, the first Japanese company to establish manufacturing operations in United States. The company's progress in ceramic semiconductor packages; How David Grooms, president of Kyocera America, assess the past 25 years of the...

  • Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires. Yokoyama, Shin; Ohba, Kenji; Kawamura, Kensaku; Kidera, Toshiro; Nakajima, Anri // Applied Physics Letters;7/23/2001, Vol. 79 Issue 4 

    The low-temperature (410 °C) selective deposition of Si on silicon nitride has been achieved by means of the time-modulated flow of disilane while a very small amount of Si is deposited on SiO[sub 2]. Very narrow (21 nm width and 28 nm thick) Si wires have been fabricated using the selective...

  • High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogen. Hemment, P. L. F.; Peart, R. F.; Yao, M. F.; Stephens, K. G.; Chater, R. J.; Kilner, J. A.; Meekison, D.; Booker, G. R.; Arrowsmith, R. P. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p952 

    Silicon wafers have been implanted with 200-keV 14N+ ions to doses between 0.25 and 1.4×1018 N+ cm-2 at a temperature of 500 °C and have been annealed at 1200 °C for 2 and 8 h. Rapid redistribution of the implanted nitrogen occurs, against the macroscopic concentration gradient, in...

  • Advanced silicon nitride ceramics. Pechenick, Alexander; Chen, I-Wei // Advanced Materials & Processes;Mar2001, Vol. 159 Issue 3, p37 

    Defines alpha and beta silicon nitrides and describes the properties of the alpha-silicon aluminum oxygen nitride (alpha-SiAlON) ceramic. Information on the bond between silicon and nitrogen; Description of the microstructure of alpha-silicon nitride; Components of the alpha-SiAlON ceramic.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics