SiC Power Module for Compact Power Conversion Equipment

K. Yamashita; K. Kato; H. Ikeuchi; J. Tanaka; K. Toyota; T. Nakamura; K. Takahashi; R. Arakawa; T. Sasaoka
March 2014
Materials Science Forum;2014, Vol. 778-780, p1096
Academic Journal
In order for wide bandgap semiconductor power devices to be practical use in various power applications, a 2in1 600V75A transfer-molded power package with a 200 degree Celsius heat resistance was newly developed on the premise of mass production. This package designed to specify a low inductance of less than 24nH enables SiC and GaN -based devices to be driven with a high slew rate hard-switching up to 5kA/us. Furthermore, this package encapsulated by a epoxy resin of a high heat resistance and equipped with thick Cu heat spreader allows these power devices to be driven up to 200 degree Celsius and shows a low thermal resistance Rth,jc of 0.6K/W for a 50ASiC-MOSFET die, which makes cooling heat sink simple. We built these SiC packages into a power conditioner for Solar Photovoltaic cells and demonstrated its operation up to 4kW output. A high power conversion efficiency of 97.7% was measured for our SiC packages, which was more efficient than Si-IGBT module by 1.5%. Consequently, a cooling heat sink of a quarter volume functioned well for SiC.


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