Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Lin Cheng; Palmour, John W.; Agarwal, Anant K.; Allen, Scott T.; Brunt, Edward V.; Gangyao Wang; Vipindas Pala; Woongje Sung; Huang, Alex Q.; O'Loughlin, Michael; Burk, Albert; Grider, Dave; Scozzie, Charles
March 2014
Materials Science Forum;2014, Vol. 778-780, p1089
Academic Journal
Advanced high-voltage (≥ 10 kV) silicon carbide (SiC) devices described in this paper have the potential to significantly impact the system size, weight, high-temperature reliability, and cost of modern variable-speed medium-voltage (MV) systems such as variable speed (VSD) drives for electric motors, integration of renewable energy including energy storage, micro-grids, and compact pulsed power systems. In this paper, we review the current status of the development of 10 kV - 20 kV class power devices in SiC, including MOSFETs, JBS diodes, IGBTs, GTO thyristors, and PiN diodes at Cree. Advantages and weakness of each device are discussed and compared. A strategy for high-voltage SiC power device development is proposed.


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