TITLE

High-Efficiency Power Conversion Using Silicon Carbide Power Electronics

AUTHOR(S)
Nee, H.-P.; Rabkowski, J.; Peftitsis, D.; Tolstoy, G.; Colmenares, J.; Sadik, D.; Bakowski, M.; J.-K. Lim; Ängquist, L.; Zdanowski, M.; Antonopoulos, A.
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p1083
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The message of this paper is that the silicon carbide power transistors of today are good enough to design converters with efficiencies and switching speeds beyond comparison with corresponding technology in silicon. This is the time to act. Only in the highest power range the devices are missing. Another important step towards high powers is to find new solutions for multi-chip circuit designs that are adapted to the high possible switching speeds of unipolar silicon carbide power transistors.
ACCESSION #
94903251

 

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