TITLE

Silicon carbide field effect transistors for detection of ultra-low concentrations of hazardous volatile organic compounds

AUTHOR(S)
Puglisi, Donatella; Eriksson, Jens; Bur, Christian; Schütze, Andreas; Spetz, Anita Lloyd; Andersson, Mike
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p1067
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Gas sensitive silicon carbide field effect transistors with nanostructured Ir gate layers have been used for the first time for sensitive detection of volatile organic compounds (VOCs) at part per billion level, for indoor air quality applications. Formaldehyde, naphthalene, and benzene have been used as typical VOCs in dry air and under 10% and 20% relative humidity. A single VOC was used at a time to study long-term stability, repeatability, temperature dependence, effect of relative humidity, sensitivity, response and recovery times of the sensors.
ACCESSION #
94903248

 

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