Nuclear Radiation Detectors based on 4H-SiC p+-n Junction

Issa, F.; Vervisch, V.; Ottaviani, L.; Szalkai, D.; Vermeeren, L.; Lyoussi, A.; Kuznetsov, A.; Lazar, M.; Klix, A.; Palais, O.; Hallen, A.
March 2014
Materials Science Forum;2014, Vol. 778-780, p1046
Academic Journal
Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.


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