Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-channel IGBTs

Tadayoshi Deguchi; Shuji Katakami; Hiroyuki Fujisawa; Kensuke Takenaka; Hitoshi Ishimori; Shinji Takasu; Manabu Takei; Manabu Arai; Yoshiyuki Yonezawa; Kenji Fukuda; Hajime Okumura
March 2014
Materials Science Forum;2014, Vol. 778-780, p1038
Academic Journal
High-voltage SiC p-channel insulated-gate bipolar transistors (p-IGBT) utilizing current-spreading layer (CSL) formed by ion implantation are fabricated and characterized. A high blocking voltage of 15 kV is achieved at room temperature by optimizing the JFET length. An ampere-class p-IGBT exhibited a low forward voltage drop of -8.5 V at -100 A/cm² and a low differential specific on-resistance of 33 m kΩ-cm² at 250 °C, while these values were high at room temperature. For further reduction of the forward voltage drop in the on-state and temperature stability, the temperature dependence of the JFET effect and carrier lifetime in p-IGBTs are investigated. Optimization of the JFET length using an epitaxial CSL, instead of applying ion implantation and lifetime enhancement, could lead to a further reduction of the forward voltage drop.


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