TITLE

On The TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTs

AUTHOR(S)
Nawaz, Muhammad; Chimento, Filippo
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p1034
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This paper addresses the design diagnostic study of 4H-SiC based IGBTs using two dimensional numerical computer simulations. Using identical set of physical device parameters (doping, thicknesses), simulated structure was first calibrated with the experimental data. A minority carrier life time in the drift layer of 1.0 - 1.6 µs and contact resistivity of 0.5 - 1.0 x 10-4 ;Ω-cm² produces a close match with the experimental device. A decay in the device transconductance and threshold voltage is observed with increasing temperature. The on-resistance first decays with temperature (i.e., increased in ionization level, and increase in minority carrier life time), stays nearly constant with further increase in the temperature (may be all carriers are now fully ionized and increase in carrier life time is compensated with decrease in the carrier mobility) and finally increases linearly with temperature (> 450 K) due to decrease in the carrier mobility. The design of buffer layer is investigated that shows lower on-state losses with thin high doped buffers. For the design of devices over 15 - 20 kV, the design of drift layer demands a doping of < 2.0 x 1014 cm-3 with epitaxial layer quality giving a carrier life time over 2.0 µs.
ACCESSION #
94903240

 

Related Articles

  • Characterization of the defect evolution in thick heavily Al-doped 4H-SiC epilayers. Shiyang Ji; Kazutoshi Kojima; Yuuki Ishida; Hirotaka Yamaguchi; Shingo Saito; Tomohisa Kato; Hidekazu Tsuchida; Sadafumi Yoshida; Hajime Okumura // Materials Science Forum;2014, Vol. 778-780, p151 

    The defect evolution on 90 µm-thick heavily Al-doped 4H-SiC epilayers with Al doping level higher than 1020 cm-3 was studied by tracing back to initial growth stage to monitor major dislocations and their propagations in each growth stage. Results from X-ray topography and KOH etching...

  • Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-channel IGBTs. Tadayoshi Deguchi; Shuji Katakami; Hiroyuki Fujisawa; Kensuke Takenaka; Hitoshi Ishimori; Shinji Takasu; Manabu Takei; Manabu Arai; Yoshiyuki Yonezawa; Kenji Fukuda; Hajime Okumura // Materials Science Forum;2014, Vol. 778-780, p1038 

    High-voltage SiC p-channel insulated-gate bipolar transistors (p-IGBT) utilizing current-spreading layer (CSL) formed by ion implantation are fabricated and characterized. A high blocking voltage of 15 kV is achieved at room temperature by optimizing the JFET length. An ampere-class p-IGBT...

  • DEVICE AND TECHNOLOGY SIMULATION OF IGBT ON SOI STRUCTURE. Lovshenko, I.; Stempitsky, V.; Tran Tuan Trung // Materials Physics & Mechanics;2014, Vol. 20 Issue 2, p111 

    Results of computer simulation of manufacturing a bipolar transistor with insulated gate (IGBT) on the base of technology "Silicon on insulator" (SOI) are presented. Current-voltage characteristics of the investigated IGBT device were calculated. The results obtained were used as a base for...

  • A Novel Structure Trench IGBT with Full Hole-barrier Layer. Yang Lingling // Applied Mechanics & Materials;2014, Issue 543-547, p757 

    A Full Hole-barrier Trench gate Insulated Gate Bipolar Transistor (FH-TIGBT) device structure is proposed for the first time. Compared with Carrier Stored Trench IGBT (CSTBT), which adds a carrier stored n layer between p base and n base in Trench IGBT (TIGBT), the new structure appends an n...

  • A New Type of IGBT Device with Electronic Enhance Collector. Yushu LAI; Yan XIONG; Shengrong ZHONG; Jian XIONG // Applied Mechanics & Materials;2014, Issue 644-650, p3844 

    A new type of substrate structure Electronic Enhance Collector IGBT (EEC-IGBT) was proposed, and the working principle was introduced in this paper. Compared with conventional IGBT, the substrate of EEC-IGBT was divided by the groove structure composed of oxide and aluminum. Finally, simulation...

  • The Research of Output Voltage Error of Matrix Converter Decreased Under Low Switch Frequency. Yi Hui Xia; Xiao Feng Zhang; Ming Zhong Qiao // Advanced Materials Research;2014, Vol. 971-973, p1194 

    Its switch frequency can't be high because of the restrains of insulated gate bipolar transistors(IGBTS) when high power electrical motor driven by matrix converter. This paper mainly discuses about the reason for output voltage error with low switch frequency. And based on the reasons, a method...

  • Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot. Jing Zhu; Yunwu Zhang; Weifeng Sun; Yangyang Lu; Yicheng Du; Yangbo Yi // IET Circuits, Devices & Systems;2016, Vol. 10 Issue 5, p410 

    A bipolar gate drive circuit considering the mitigation of the turn-off losses (Eoff) and the overshoot of the collector voltage (VOV) for the insulated gate bipolar transistor (IGBT) is proposed with 600 V bulk-silicon bipolarcomplementary metal-oxide-semiconductor double-diffused...

  • New improved three-phase hybrid multilevel inverter with reduced number of components. Saeidabadi, Saeid; Gandomi, Amin Ashraf; Hosseini, Seyed Hossein; Sabahi, Mehran; Gandomi, Yasser Ashraf // IET Power Electronics;2017, Vol. 10 Issue 12, p1403 

    A new three-phase hybrid multilevel inverter configuration is proposed. The proposed inverter is modular and consists of three single-phase H-bridge inverters, one three-phase H-bridge inverter and auxiliary modules for increasing the number of output voltage levels. The performance of the...

  • Snap-back free shorted-anode super-junction TCIGBT. Peng Luo; Sweet, Mark; Sankara Narayanan, Ekkanath Madathil // IET Power Electronics;2018, Vol. 11 Issue 4, p654 

    A novel structure called the shorted-anode super-junction trench clustered insulated gate bipolar transistor (SA-SJTCIGBT) is proposed and demonstrated through numerical simulations in 1.2 kV, field-stop technology. This device is based on the SJ-TCIGBT concept. In the SA-SJ-TCIGBT structure,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics