TITLE

Stability of Current Gain in SiC BJTs

AUTHOR(S)
Buono, B.; Allerstam, F.; Domeij, M.; Konstantinov, A.; Gumaelius, K.; Das, H.; Neyer, T.
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p1017
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work, large area SiC BJTs with good long-term stability in 1000 hrs DC stress tests are demonstrated. It is also illustrated how wafer scanning techniques can be used to reject BJT dies with basal plane dislocations, thereby eliminating the risk for bipolar degradation.
ACCESSION #
94903236

 

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