Stability of Current Gain in SiC BJTs

Buono, B.; Allerstam, F.; Domeij, M.; Konstantinov, A.; Gumaelius, K.; Das, H.; Neyer, T.
March 2014
Materials Science Forum;2014, Vol. 778-780, p1017
Academic Journal
In this work, large area SiC BJTs with good long-term stability in 1000 hrs DC stress tests are demonstrated. It is also illustrated how wafer scanning techniques can be used to reject BJT dies with basal plane dislocations, thereby eliminating the risk for bipolar degradation.


Related Articles

  • Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC. Wu, Fangzhen; Wang, Huanhuan; Byrappa, Shayan; Raghothamachar, Balaji; Dudley, Michael; Wu, Ping; Xu, Xueping; Zwieback, Ilya // Journal of Electronic Materials;May2013, Vol. 42 Issue 5, p787 

    Synchrotron white-beam x-ray topography (SWBXT) studies of defects in 100-mm-diameter 4H-SiC wafers grown using physical vapor transport are presented. SWBXT enables nondestructive examination of thick and large-diameter SiC wafers, and defects can be imaged directly. Analysis of the contrast...

  • Micro-Raman characterization of 4H-SiC stacking faults. Piluso, N.; Camarda, M.; Anzalone, R.; La Via, F. // Materials Science Forum;2014, Vol. 778-780, p378 

    Micro-Raman characterization has been used as alternative technique to the photoluminescence in order to detect and study 4H-SiC stacking faults. The alteration of the crystalline stacking sequence perturbs the phonon-plasmon coupling which acts between the crystalline phonon modes and the...

  • VF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers. C. Ota; J. Nishio; K. Takao; T. Shinohe // Materials Science Forum;2014, Vol. 778-780, p851 

    In this paper, we found different origin of forward voltage (VF) degradation of SiC bipolar devices other than basal plane dislocations (BPDs) propagated from the SiC substrate. VF degradation of the 4H-SiC PiN diodes with low-BPD wafers was evaluated and its origins were discussed. Some diodes...

  • Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation. Ryohei Tanuma; Hidekazu Tsuchida // Materials Science Forum;2014, Vol. 778-780, p338 

    This paper demonstrates optical second-harmonic generation (SHG) and two-photon excited photoluminescence (2P-PL) imaging of 3C-SiC inclusions forming triangular and carrot-type defects in 4H-SiC epilayers. Triangular defects exhibit clear SHG images because 3C-SiC is SHG active, but not 4H-SiC...

  • Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions. Stahlbush, R. E.; VanMil, B. L.; Myers-Ward, R. L.; Lew, K-K.; Gaskill, D. K.; Eddy, C. R. // Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG 

    The paths of basal plane dislocations (BPDs) through 4H-SiC epitaxial layers grown on wafers with an 8° offcut were tracked using ultraviolet photoluminescence imaging. The reduction of BPDs by conversion to threading edge dislocations was investigated at ex situ and in situ growth...

  • Growth of step-free surfaces on device-size (0001)SiC mesas. Powell, J. Anthony; Neudeck, Philip G.; Trunek, Andrew J.; Beheim, Glenn M.; Matus, Lawrence G.; Hoffman, Richard W.; Hoffman Jr., Richard W.; Keys, Luann J. // Applied Physics Letters;9/4/2000, Vol. 77 Issue 10 

    It is believed that atomic-scale surface steps cause defects in single-crystal films grown heteroepitaxially on SiC substrates. A method is described whereby surface steps can be grown out of existence on arrays of device-size mesas on commercial "on-axis" SiC wafers. Step-free mesas with...

  • Nondestructive defect delineation in SiC wafers based on an optical stress technique. Ma, Xianyun; Parker, Mathew; Sudarshan, Tangali S. // Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3298 

    The potential of using the optical stress technique to delineate the various defects in silicon carbide (SiC) wafers has been fully demonstrated. The observed defects include micropipes, dislocations, stress striations, grain boundary or dislocation walls, and regions of polytype nonuniformity....

  • Defects grouping and characterizations of PL-imaging methods for 4H-SiC epitaxial layers. M. Odawara; K. Kamei; Y. Miyasaka; T.Yamashita; S. Takahashi; Y. Kageshima; K. Momose; H. Osawa; T. Sato // Materials Science Forum;2014, Vol. 778-780, p382 

    4H-SiC epitaxial wafers were prepared for the investigation of epitaxial stacking faults(SFs), for the purpose of classification and add to the epitaxial specification by PL-imaging analysis. Black colored SFs detected in PL colored images were focused, and investigated. Black SFs in the PL...

  • Fabrication of silicon carbide nanoparticles using picosecond pulsed laser ablation in acetone with characterizations from TEM and XRD. Yamada, Takumu; Araki, Fumisato; Ishihara, Jun; Miyajima, Kensuke // AIP Advances;Oct2019, Vol. 9 Issue 10, pN.PAG 

    We fabricated SiC nanoparticles (NPs) using a laser ablation method in acetone with a picosecond pulsed laser and characterized the resulting sizes, shapes, and crystal structures using transmission electron microscopy (TEM) and X-ray diffraction (XRD). We revealed two formation processes for...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics