TITLE

Modeling of High Performance 4H-SiC Emitter Coupled Logic Circuits

AUTHOR(S)
Singh, Shakti; El Sayed, Nourhan; Elgabra, Hazem; ElBoshra, Tamador; Wahbah, Maisam; Al Zaabi, Mariam
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p1009
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
SiC, a wide band gap semiconductor, is capable of robust operation at temperatures well above 600°C. SiC bipolar transistors are well suited for applications at high temperatures as, unlike MOSFET, it does not have a critical gate oxide, and hence oxide reliability at high temperatures is not an issue. In this paper, the design of optimized emitter coupled logic technology circuits using 4H-SiC bipolar transistors is presented. The circuits work over a wide range of temperatures and power supply voltages at high speeds, demonstrating the potential of robust high speed ECL integrated circuits in SiC for small-scale logic applications.
ACCESSION #
94903234

 

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