SiC etching and sacrificial oxidation effects on the performance of 4H-SiC BJTs

Lanni, Luigia; Malm, Bengt Gunnar; Östling, Mikael; Zetterling, Carl-Mikael
March 2014
Materials Science Forum;2014, Vol. 778-780, p1005
Academic Journal
Performance of 4H-SiC BJTs fabricated on a single 100mm wafer with different SiC etching and sacrificial oxidation procedures is compared in terms of peak current gain in relation to base intrinsic sheet resistance. The best performance was achieved when device mesas were defined by inductively coupled plasma etching and a dry sacrificial oxide was grown at 1100 °C.


Related Articles

  • Functional design of a pulsed two-frequency capacitively coupled plasma in CF[sub 4]/Ar for SiO[sub 2] etching. Maeshige, Kazunobu; Washio, Gentaro; Yagisawa, Takashi; Makabe, Toshiaki // Journal of Applied Physics;6/15/2002, Vol. 91 Issue 12, p9494 

    A capacitively coupled plasma (CCP) with a different frequency source at each of two parallel plates is a powerful tool for SiO[sub 2] etching. A time modulation of two-frequency CCP by a pulsed-power operation will be one of the practical solutions in the next generation of etchers, and will...

  • Oxidation induced ON1, ON2a/b defects in 4H-SiC characterized by DLTS. Booker, I. D.; Abdalla, H.; Lilja, L.; Hassan, J.; Bergman, J. P.; Sveinbjörnsson, E. Ö.; Janzén, E. // Materials Science Forum;2014, Vol. 778-780, p281 

    The deep levels ON1 and ON2a/b introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON2a/b defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent...

  • Deep levels generated by thermal oxidation in p-type 4H-SiC. Kawahara, Koutarou; Suda, Jun; Kimoto, Tsunenobu // Journal of Applied Physics;Jan2013, Vol. 113 Issue 3, p033705 

    Thermal oxidation is an effective method to reduce deep levels, especially the Z1/2-center (EC-0.67 eV), which strongly suppresses carrier lifetimes in n-type 4H-SiC epilayers. The oxidation, however, simultaneously generates other deep levels, HK0 (EV+0.79 eV) and HK2 (EV+0.98 eV) centers,...

  • Nitridation effects of gate oxide on channel properties of SiC trench MOSFETs. K. Ariyoshi; S. Harada; J. Senzaki; T. Kojima; K. Kojima; Y. Tanaka; T. Shinohe // Materials Science Forum;2014, Vol. 778-780, p615 

    We have studied gate oxide processes for SiC trench MOSFETs. It is demonstrated that nitridation of gate oxide is effective to suppress the variation of channel mobility depending on channel plane orientation and substrate off-angles. In addition, improved channel mobility has been obtained by...

  • Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET. Masayuki Furuhashi; Toshikazu Tanioka; Masayuki Imaizumi; Naruhisa Miura; Satoshi Yamakawa // Materials Science Forum;2014, Vol. 778-780, p985 

    We found that threshold voltage (Vth) of a 4H-SiC MOSFET increases drastically by performing low temperature wet oxidation after nitridation in a gate oxide process. The increment of Vth depends on the wet oxidation conditions. Wet oxidation increases the interface trap density (Dit) at deep...

  • High Temperature Hydrogen Sensor based on Silicon Carbide (SiC) MOS Capacitor Structure. Ofrim, B.; Brezeanu, G.; Draghici, F.; Rusu, I. // Materials Science Forum;2014, Vol. 778-780, p1054 

    MOS capacitor devices based on silicon carbide (SiC) are largely used as hydrogen detectors in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is analyzed by extensive simulations. The sensitivity to hydrogen detection, stability to...

  • The impact of oxygen flow rate on the oxide thickness and interface trap density in 4H-SiC MOS capacitors. Thomas, S. M.; Jennings, M. R.; Sharma, Y. K.; Fisher, C. A.; Mawby, P. A. // Materials Science Forum;2014, Vol. 806, p149 

    Silicon carbide based devices have the potential to surpass silicon technology in high power, high frequency and high temperature applications. 4H-SiC MOS transistors currently suffer from a low channel mobility due to a high density of traps near the oxide/SiC interface. In this work, oxides...

  • Model of tunneling transistors based on graphene on SiC. Michetti, Paolo; Cheli, Martina; Iannaccone, Giuseppe // Applied Physics Letters;3/29/2010, Vol. 96 Issue 13, p133508 

    Recent experiments shown that graphene epitaxially grown on Silicon carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC tunnel field-effect...

  • Sub-bandgap light-induced carrier generation at room temperature in 4H-SiC metal oxide semiconductor capacitors. DasGupta, Sandeepan; Armstrong, Andrew; Kaplar, Robert; Marinella, Matthew; Brock, Reinhard; Smith, Mark; Atcitty, Stan // Applied Physics Letters;10/24/2011, Vol. 99 Issue 17, p173502 

    Carrier generation characteristics in n-type substrate silicon carbide (SiC) metal oxide semiconductor capacitors induced by sub-bandgap energy light are reported. The generation rate is high enough to create an inversion layer in approximately 20 min with monochromatic front side illumination...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics