TITLE

SiC etching and sacrificial oxidation effects on the performance of 4H-SiC BJTs

AUTHOR(S)
Lanni, Luigia; Malm, Bengt Gunnar; Östling, Mikael; Zetterling, Carl-Mikael
PUB. DATE
March 2014
SOURCE
Materials Science Forum;2014, Vol. 778-780, p1005
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Performance of 4H-SiC BJTs fabricated on a single 100mm wafer with different SiC etching and sacrificial oxidation procedures is compared in terms of peak current gain in relation to base intrinsic sheet resistance. The best performance was achieved when device mesas were defined by inductively coupled plasma etching and a dry sacrificial oxide was grown at 1100 °C.
ACCESSION #
94903233

 

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